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Title: Electrical and optical control of single spins integrated in scalable semiconductor devices

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.

Authors:
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Award ID(s):
1641099
Publication Date:
NSF-PAR ID:
10126473
Journal Name:
Science
Volume:
366
Issue:
6470
Page Range or eLocation-ID:
p. 1225-1230
ISSN:
0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Sponsoring Org:
National Science Foundation
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