More Like this

1. Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy

   https://doi.org/10.1002/qute.202100033  

   Yang, Shuyang ; Schröter, Niels B. M. ; Strocov, Vladimir N. ; Schuwalow, Sergej ; Rajpalk, Mohana ; Ohtani, Keita ; Krogstrup, Peter ; Winkler, Georg W. ; Gukelberger, Jan ; Gresch, Dominik ; et al ( January 2022 , Advanced Quantum Technologies)

   The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle‐resolved photoemission spectroscopy (ARPES). Large‐scale first principles simulations are enabled by using DFT calculations with a machine‐learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a “bulk unfolding” scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes.

    

   more » « less
2. Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

   https://doi.org/10.1002/adma.202207622  

   Chong, Su Kong ; Zhang, Peng ; Li, Jie ; Zhou, Yinong ; Wang, Jingyuan ; Zhang, Huairuo ; Davydov, Albert V. ; Eckberg, Christopher ; Deng, Peng ; Tai, Lixuan ; et al ( February 2023 , Advanced Materials)

   Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)‐grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, a novel procedure is demonstrated, employing a combination of thin‐film deposition and 2D material stacking techniques, to create dual‐gated devices of the MBE‐grown quantum anomalous Hall insulator, Cr‐doped (Bi,Sb)₂Te₃. In these devices, orthogonal control over the field‐induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

    

   more » « less
3. Electronic structure in a transition metal dipnictide TaAs 2

   https://doi.org/10.1088/1361-648X/ad04fc  

   Regmi, Sabin ; Huang, Cheng-Yi ; Khan, Mojammel A. ; Wang, Baokai ; Pradhan Sakhya, Anup ; Hosen, M. Mofazzel ; Thompson, Jesse ; Singh, Bahadur ; Denlinger, Jonathan D. ; Ishigami, Masahiro ; et al ( November 2023 , Journal of Physics: Condensed Matter)

   The family of transition-metal dipnictides has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently,${\mathrm{T}\mathrm{a}\mathrm{A}\mathrm{s}}_2$, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface (FS) and linearly dispersive bands on the ($\bar{2}01$) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations shows that the linearly dispersive bands on the measured surface of${\mathrm{T}\mathrm{a}\mathrm{A}\mathrm{s}}_2$are trivial bulk bands. The absence of symmetry-protected surface state on the ($\bar{2}01$) surface indicates its topologically dark nature. The presence of open FS features suggests that the open-orbit fermiology could contribute to the extremely large MR of${\mathrm{T}\mathrm{a}\mathrm{A}\mathrm{s}}_2$.

    

   more » « less
4. Observation of the topological Anderson insulator in disordered atomic wires

   https://doi.org/10.1126/science.aat3406  

   Meier, Eric J. ; An, Fangzhao Alex ; Dauphin, Alexandre ; Maffei, Maria ; Massignan, Pietro ; Hughes, Taylor L. ; Gadway, Bryce ( October 2018 , Science)

   Topology and disorder have a rich combined influence on quantum transport. To probe their interplay, we synthesized one-dimensional chiral symmetric wires with controllable disorder via spectroscopic Hamiltonian engineering, based on the laser-driven coupling of discrete momentum states of ultracold atoms. Measuring the bulk evolution of a topological indicator after a sudden quench, we observed the topological Anderson insulator phase, in which added disorder drives the band structure of a wire from topologically trivial to nontrivial. In addition, we observed the robustness of topologically nontrivial wires to weak disorder and measured the transition to a trivial phase in the presence of strong disorder. Atomic interactions in this quantum simulation platform may enable realizations of strongly interacting topological fluids.

    

   more » « less
5. Anomalous Landau quantization in intrinsic magnetic topological insulators

   https://doi.org/10.1038/s41467-023-40383-x  

   Chong, Su Kong ; Lei, Chao ; Lee, Seng Huat ; Jaroszynski, Jan ; Mao, Zhiqiang ; MacDonald, Allan H. ; Wang, Kang L. ( August 2023 , Nature Communications)

   The intrinsic magnetic topological insulator, Mn(Bi_1−xSb_x)₂Te₄, has been identified as a Weyl semimetal with a single pair of Weyl nodes in its spin-aligned strong-field configuration. A direct consequence of the Weyl state is the layer dependent Chern number,$$C$$$C$. Previous reports in MnBi₂Te₄thin films have shown higher$$C$$$C$states either by increasing the film thickness or controlling the chemical potential. A clear picture of the higher Chern states is still lacking as data interpretation is further complicated by the emergence of surface-band Landau levels under magnetic fields. Here, we report a tunable layer-dependent$$C$$$C$ = 1 state with Sb substitution by performing a detailed analysis of the quantization states in Mn(Bi_1−xSb_x)₂Te₄dual-gated devices—consistent with calculations of the bulk Weyl point separation in the doped thin films. The observed Hall quantization plateaus for our thicker Mn(Bi_1−xSb_x)₂Te₄films under strong magnetic fields can be interpreted by a theory of surface and bulk spin-polarised Landau level spectra in thin film magnetic topological insulators.

    

   more » « less