skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Effect of microstructure on the optical properties of sputtered iridium thin films
The refractory metal iridium has many applications in high performance optical devices due to its high reflectivity into X-ray frequencies, low oxidation rate, and high melting point. Depositing Ir via magnetron sputtering produces high quality thin films, but the chamber pressure and sputter conditions can change Ir film microstructure on the nanoscale. Film microstructure is commonly examined through microscopy of film cross-sections, which is both a destructive characterization method and time consuming. In this work, we have utilized a non-destructive characterization technique, spectroscopic ellipsometry, to correlate the optical properties of the metal films with their structural morphologies, enabling large-scale inspection of optical components or the ability to customize the metal refractive index for the application at hand. The optical properties of Ir thin films deposited at chamber pressures from 10 mTorr to 25 mTorr are reported and compared to microscopy and resistivity results. The measurements were conducted with films deposited both on a bare wafer and on a titanium sublayer.  more » « less
Award ID(s):
1806311
PAR ID:
10142574
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optical Materials Express
Volume:
10
Issue:
4
ISSN:
2159-3930
Format(s):
Medium: X Size: Article No. 1120
Size(s):
Article No. 1120
Sponsoring Org:
National Science Foundation
More Like this
  1. Thin-film transparent heaters (TFTHs) are gaining popularity in optoelectronics and a variety of domestic applications, including smart windows, car defrosters, and other devices. The deposition and characterization of TFTHs made of gallium-doped zinc oxide (GZO) are presented in this work. GZO thin films were deposited via pulsed laser deposition on glass substrates with varying oxygen partial pressures from 0 to 10 mTorr during deposition. The samples demonstrated very low sheet resistance values between 5 and 17 Ω/sq from 0 to 10 mTorr, respectively. UV/vis transmission spectra revealed that TFTHs have a high optical transparency above 80%. GZO-based TFTHs demonstrated a consistent and repeatable joule heating effect, with temperatures reaching 76 °C with a low input voltage of 10 V. This research could guide the future use of GZO as a transparent conducting oxide material for many potential cost-effective applications from low-powered electronics to lightweight and wearable devices. 
    more » « less
  2. Abstract BaTiO3is a technologically relevant material in the perovskite oxide class with above‐room‐temperature ferroelectricity and a very large electro‐optical coefficient, making it highly suitable for emerging electronic and photonic devices. An easy, robust, straightforward, and scalable growth method is required to synthesize epitaxial BaTiO3thin films with sufficient control over the film's stoichiometry to achieve reproducible thin film properties. Here the growth of BaTiO3thin films by hybrid molecular beam epitaxy is reported. A self‐regulated growth window is identified using complementary information obtained from reflection high energy electron diffraction, the intrinsic film lattice parameter, film surface morphology, and scanning transmission electron microscopy. Subsequent optical characterization of the BaTiO3films by spectroscopic ellipsometry revealed refractive index and extinction coefficient values closely resembling those of stoichiometric bulk BaTiO3crystals for films grown inside the growth window. Even in the absence of a lattice parameter change of BaTiO3thin films, degradation of optical properties is observed, accompanied by the appearance of a wide optical absorption peak in the IR spectrum, attributed to optical transitions involving defect states present. Therefore, the optical properties of BaTiO3can be utilized as a much finer and more straightforward probe to determine the stoichiometry level present in BaTiO3films. 
    more » « less
  3. Copper sulphide (CuxS, x=1 to 2) is a metal chalcogenide semiconductor that exhibits useful optical and electrical properties due to the presence of copper vacancies. This makes CuxS thin films useful for a number of applications including infrared absorbing coatings, solar cells, thin-film electronics, and as a precursor for CZTS (Copper Zinc Tin Sulphide) thin films. Post-deposition sintering of CuxS nanoparticle films is a key process that affects the film properties and hence determines its operational characteristics in the above applications. Intense pulse light (IPL) sintering uses visible broad-spectrum xenon light to rapidly sinter nanoparticle films over large-areas, and is compatible with methods such as roll-to-roll deposition for large-area deposition of colloidal nanoparticle films and patterns. This paper experimentally examines the effect of IPL parameters on sintering of CuxS thin films. As-deposited and sintered films are compared in terms of their crystal structure, as well as optical and electrical properties, as a function of the IPL parameters. 
    more » « less
  4. Abstract This study reports a pulsed laser deposition-assisted synthesis of highly metallic titanium nitride (TiN) and a series of semiconducting titanium oxynitride (TiNxOy) compounds in thin film form with tunable plasmonic properties by carefully altering the nitrogen (N)-oxygen (O) ratio. The N/O ratio was controlled from 0.3 (highest oxygen doping of TiN) to ~ 1.0 (no oxygen doping of TiN) by growing the TiN films under nitrogen pressures of 50, 35, and 10 mTorr and high vacuum conditions of 2 × 10−6 Torr with no external gas introduced. The presence of nitrogen in the deposition chamber during the film growth affects the gas phase oxidation of TiN to TiNxOyby increasing the mean free path-dependent N and O inter-collisions per second by two to three orders of magnitudes. The evidence of increased oxidation of TiN to TiNxOywith an increase in nitrogen deposition pressure was obtained using X-ray photoelectron spectroscopy analysis. While the TiN samples deposited in high vacuum conditions had the highest reflectance, TiNxOythin films were also found to possess high reflectance at low frequency with a well-defined edge around 20,000 cm−1. Furthermore, the vacuum-deposited TiN samples showed a large negative dielectric constant of -330 and the largest frequency of zero-crossing at 25,000 cm−1; the TiNxOysamples deposited in the presence of nitrogen ambient also showed promising plasmonic applications at the near-mid infrared range. A comparison of the dielectric constant and loss function data of this research with the literature values for noble metals seems to indicate that TiN and TiNxOyhave the potential to replace gold and silver in the visible and near-infrared spectral regions. 
    more » « less
  5. null (Ed.)
    Abstract Superconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 °C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 °C in 20 mTorr O 2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates. 
    more » « less