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1. ALD-passivated silicon nanowires for broadband absorption applications

   https://doi.org/10.1063/5.0054104  

   Kimeu, Felix; Albin, Sacharia; Song, Kyo; Santiago, Kevin C. (June 2021, AIP Advances)
2. Annealing Effects on the Band Alignment of ALD SiO ₂ on (In _x Ga _1−x ) ₂ O ₃ for x = 0.25–0.74

   https://doi.org/10.1149/2162-8777/ab8364  

   Fares, Chaker; Xian, Minghan; Smith, David J.; McCartney, M. R.; Kneiß, Max; von Wenckstern, Holger; Grundmann, Marius; Tadjer, Marko; Ren, Fan; Pearton, S. J. (April 2020, ECS Journal of Solid State Science and Technology)

   The band alignment of Atomic Layer Deposited SiO₂on (In_xGa_1−x)₂O₃at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In_0.25Ga_0.75)₂O₃, −0.45 eV for (In_0.42Ga_0.58)₂O₃, −0.40 eV for (In_0.60Ga_0.40)₂O₃, and −0.35 eV (In_0.74Ga_0.26)₂O₃for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In_xGa_1−x)₂O₃studied. 

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3. A moving porous media model for continuous spatial particle ALD

   https://doi.org/10.1016/j.powtec.2023.118448  

   Hartig, Julia; Dahanayake, Vidumin; Nguyen, Julie; Wilson, Carter; Barnes, Austin M.; Weimer, Alan W. (May 2023, Powder Technology)
4. Design and Characterization of ALD-Based Overcoats for Supported Metal Nanoparticle Catalysts

   https://doi.org/10.1021/acscatal.0c05099  

   Sarnello, Erik; Lu, Zheng; Seifert, Soenke; Winans, Randall E.; Li, Tao (March 2021, ACS Catalysis)

   null (Ed.)
5. Functional model for analysis of ALD nucleation and quantification of area-selective deposition

   https://doi.org/10.1116/1.5054285  

   Parsons, Gregory N. (March 2019, Journal of Vacuum Science & Technology A)