Harnessing the exotic properties of molecular level nanostructures to produce novel sensors, metamaterials, and futuristic computer devices can be technologically transformative. In addition, connecting the molecular nanostructures to ferromagnetic electrodes bring the unprecedented opportunity of making spin property based molecular devices. We have demonstrated that magnetic tunnel junction based molecular spintronics device (MTJMSD) approach to address numerous technological hurdles that have been inhibiting this field for decades (P. Tyagi, J. Mater. Chem., Vol. 21, 4733). MTJMSD approach is based on producing a capacitor like a testbed where two metal electrodes are separated by an ultrathin insulator and subsequently bridging the molecule nanostructure across the insulator to transform a capacitor into a molecular device. Our prior work showed that MTJMSDs produced extremely intriguing phenomenon such as room temperature current suppression by six orders, spin photovoltaic effect, and evolution of new forms of magnetic metamaterials arising due to the interaction of the magnetic a molecule with two ferromagnetic thin films. However, making robust and reproducible electrical connections with exotic molecules with ferromagnetic electrodes is full of challenges and requires attention to MTJMSD structural stability. This paper focuses on MTJMSD stability by describing the overall fabrication protocol and the associated potential threatmore »
Tuning magnetic anisotropy in Co–BaZrO 3 vertically aligned nanocomposites for memory device integration
Ferromagnetic nanostructures with strong anisotropic properties are highly desired for their potential integration into spintronic devices. Several anisotropic candidates, such as CoFeB and Fe–Pt, have been previously proposed, but many of them have limitations such as patterning issues or thickness restrictions. In this work, Co–BaZrO 3 (Co–BZO) vertically aligned nanocomposite (VAN) films with tunable magnetic anisotropy and coercive field strength have been demonstrated to address this need. Such tunable magnetic properties are achieved through tuning the thickness of the Co–BZO VAN structures and the aspect ratio of the Co nanostructures, which can be easily integrated into spintronic devices. As a demonstration, we have integrated the Co–BZO VAN nanostructure into tunnel junction devices, which demonstrated resistive switching alluding to Co–BZO's immense potential for future spintronic devices.
- Award ID(s):
- 1809520
- Publication Date:
- NSF-PAR ID:
- 10145318
- Journal Name:
- Nanoscale Advances
- Volume:
- 1
- Issue:
- 11
- Page Range or eLocation-ID:
- 4450 to 4458
- ISSN:
- 2516-0230
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Publisher's Version of Record
- https://doi.org/10.1039/c9na00438f
