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Title: Tuning magnetic anisotropy in Co–BaZrO 3 vertically aligned nanocomposites for memory device integration
Ferromagnetic nanostructures with strong anisotropic properties are highly desired for their potential integration into spintronic devices. Several anisotropic candidates, such as CoFeB and Fe–Pt, have been previously proposed, but many of them have limitations such as patterning issues or thickness restrictions. In this work, Co–BaZrO 3 (Co–BZO) vertically aligned nanocomposite (VAN) films with tunable magnetic anisotropy and coercive field strength have been demonstrated to address this need. Such tunable magnetic properties are achieved through tuning the thickness of the Co–BZO VAN structures and the aspect ratio of the Co nanostructures, which can be easily integrated into spintronic devices. As a demonstration, we have integrated the Co–BZO VAN nanostructure into tunnel junction devices, which demonstrated resistive switching alluding to Co–BZO's immense potential for future spintronic devices.  more » « less
Award ID(s):
1809520
NSF-PAR ID:
10145318
Author(s) / Creator(s):
; ; ; ; ; ; ;
Date Published:
Journal Name:
Nanoscale Advances
Volume:
1
Issue:
11
ISSN:
2516-0230
Page Range / eLocation ID:
4450 to 4458
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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