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1. Band offsets of (100) β -(Al x Ga 1−x ) 2 O 3 / β -Ga 2 O 3 heterointerfaces grown via MOCVD

   https://doi.org/10.1063/5.0031584  

   Bhuiyan, A F ; Feng, Zixuan ; Johnson, Jared M. ; Huang, Hsien-Lien ; Hwang, Jinwoo ; Zhao, Hongping ( December 2020 , Applied Physics Letters)

   null (Ed.)
2. Anisotropic dielectric functions, band-to-band transitions, and critical points in α -Ga 2 O 3

   https://doi.org/10.1063/5.0031424  

   Hilfiker, Matthew ; Korlacki, Rafał ; Jinno, Riena ; Cho, Yongjin ; Xing, Huili Grace ; Jena, Debdeep ; Kilic, Ufuk ; Stokey, Megan ; Schubert, Mathias ( February 2021 , Applied Physics Letters)

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3. Epitaxial growth of Mg x Ca 1−x O on 4H–SiC(0001) and β-Ga 2 O 3 wide band gap semiconductors with atomic layer deposition

   https://doi.org/10.1557/jmr.2019.376  

   Lou, Xiabing ; Gong, Xian ; Kim, Sang Bok ; Gordon, Roy G. ( April 2020 , Journal of Materials Research)

   SiC and Ga 2 O 3 are promising wide band gap semiconductors for applications in power electronics because of their high breakdown electric field and normally off operation. However, lack of a suitable dielectric material that can provide high interfacial quality remains a problem. This can potentially lead to high leakage current and conducting loss. In this work, we present a novel atomic layer deposition process to grow epitaxially Mg x Ca 1− x O dielectric layers on 4H-SiC(0001) and β-Ga 2 O 3 $\left( {\bar 201} \right)$ substrates. By tuning the composition of Mg x Ca 1− x O toward the substrate lattice constant, better interfacial epitaxy can be achieved. The interfacial and epitaxy qualities were investigated and confirmed by cross-sectional transmission electron microscopy and X-ray diffraction studies. Mg 0.72 Ca 0.28 O film showed the highest epitaxy quality on 4H-SiC(0001) because of its closest lattice match with the substrate. Meanwhile, highly textured Mg 0.25 Ca 0.75 O films can be grown on β-Ga 2 O 3 $\left( {\bar 201} \right)$ with a preferred orientation of (111). 

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4. Synthesis and Characterization of Single-Phase Metal Dodecaboride Solid Solutions: Zr 1–x Y x B 12 and Zr 1–x U x B 12

   https://doi.org/10.1021/jacs.9b03482  

   Akopov, Georgiy ; Mak, Wai H. ; Koumoulis, Dimitrios ; Yin, Hang ; Owens-Baird, Bryan ; Yeung, Michael T. ; Muni, Mit H. ; Lee, Shannon ; Roh, Inwhan ; Sobell, Zachary C. ; et al ( May 2019 , Journal of the American Chemical Society)
5. Linear strain and stress potential parameters for the three fundamental band to band transitions in β -Ga 2 O 3

   https://doi.org/10.1063/5.0078157  

   Korlacki, R. ; Knudtson, J. ; Stokey, M. ; Hilfiker, M. ; Darakchieva, V. ; Schubert, M. ( January 2022 , Applied Physics Letters)