Hou, Wenhui, Azizimanesh, Ahmad, Sewaket, Arfan, Peña, Tara, Watson, Carla, Liu, Ming, Askari, Hesam, and Wu, Stephen M. Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor. Retrieved from https://par.nsf.gov/biblio/10147642. Nature Nanotechnology 14.7 Web. doi:10.1038/s41565-019-0466-2.

Hou, Wenhui, Azizimanesh, Ahmad, Sewaket, Arfan, Peña, Tara, Watson, Carla, Liu, Ming, Askari, Hesam, & Wu, Stephen M. Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor. Nature Nanotechnology, 14 (7). Retrieved from https://par.nsf.gov/biblio/10147642. https://doi.org/10.1038/s41565-019-0466-2

Hou, Wenhui, Azizimanesh, Ahmad, Sewaket, Arfan, Peña, Tara, Watson, Carla, Liu, Ming, Askari, Hesam, and Wu, Stephen M. "Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor". Nature Nanotechnology 14 (7). Country unknown/Code not available. https://doi.org/10.1038/s41565-019-0466-2. https://par.nsf.gov/biblio/10147642.

@article{osti_10147642,
place = {Country unknown/Code not available}, title = {Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor}, url = {https://par.nsf.gov/biblio/10147642}, DOI = {10.1038/s41565-019-0466-2}, abstractNote = {}, journal = {Nature Nanotechnology}, volume = {14}, number = {7}, author = {Hou, Wenhui and Azizimanesh, Ahmad and Sewaket, Arfan and Peña, Tara and Watson, Carla and Liu, Ming and Askari, Hesam and Wu, Stephen M.}, }