Hu, Gangyi, Madusanka, Prabuddha, Dhawan, Ruchika, Xie, Weihua, Debord, Jeff, Tran, Toan, Maggio, Kenneth, Edwards, Hal, and Lee, Mark. Scaling of Power Generation With Dopant Density in Integrated Circuit Silicon Thermoelectric Generators. Retrieved from https://par.nsf.gov/biblio/10148227. IEEE Electron Device Letters 40.12 Web. doi:10.1109/LED.2019.2947357.

Hu, Gangyi, Madusanka, Prabuddha, Dhawan, Ruchika, Xie, Weihua, Debord, Jeff, Tran, Toan, Maggio, Kenneth, Edwards, Hal, & Lee, Mark. Scaling of Power Generation With Dopant Density in Integrated Circuit Silicon Thermoelectric Generators. IEEE Electron Device Letters, 40 (12). Retrieved from https://par.nsf.gov/biblio/10148227. https://doi.org/10.1109/LED.2019.2947357

Hu, Gangyi, Madusanka, Prabuddha, Dhawan, Ruchika, Xie, Weihua, Debord, Jeff, Tran, Toan, Maggio, Kenneth, Edwards, Hal, and Lee, Mark. "Scaling of Power Generation With Dopant Density in Integrated Circuit Silicon Thermoelectric Generators". IEEE Electron Device Letters 40 (12). Country unknown/Code not available. https://doi.org/10.1109/LED.2019.2947357. https://par.nsf.gov/biblio/10148227.

@article{osti_10148227,
place = {Country unknown/Code not available}, title = {Scaling of Power Generation With Dopant Density in Integrated Circuit Silicon Thermoelectric Generators}, url = {https://par.nsf.gov/biblio/10148227}, DOI = {10.1109/LED.2019.2947357}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {40}, number = {12}, author = {Hu, Gangyi and Madusanka, Prabuddha and Dhawan, Ruchika and Xie, Weihua and Debord, Jeff and Tran, Toan and Maggio, Kenneth and Edwards, Hal and Lee, Mark}, }