Li, Wenshen, Nomoto, Kazuki, Sundar, Aditya, Lee, Kevin, Zhu, Mingda, Hu, Zongyang, Beam, Edward, Xie, Jinqiao, Pilla, Manyam, Gao, Xiang, Rouvimov, Sergei, Jena, Debdeep, and Xing, Huili Grace. Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Retrieved from https://par.nsf.gov/biblio/10148257. Japanese Journal of Applied Physics 58.SC Web. doi:10.7567/1347-4065/ab0f1b.

Li, Wenshen, Nomoto, Kazuki, Sundar, Aditya, Lee, Kevin, Zhu, Mingda, Hu, Zongyang, Beam, Edward, Xie, Jinqiao, Pilla, Manyam, Gao, Xiang, Rouvimov, Sergei, Jena, Debdeep, & Xing, Huili Grace. Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Japanese Journal of Applied Physics, 58 (SC). Retrieved from https://par.nsf.gov/biblio/10148257. https://doi.org/10.7567/1347-4065/ab0f1b

Li, Wenshen, Nomoto, Kazuki, Sundar, Aditya, Lee, Kevin, Zhu, Mingda, Hu, Zongyang, Beam, Edward, Xie, Jinqiao, Pilla, Manyam, Gao, Xiang, Rouvimov, Sergei, Jena, Debdeep, and Xing, Huili Grace. "Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms". Japanese Journal of Applied Physics 58 (SC). Country unknown/Code not available. https://doi.org/10.7567/1347-4065/ab0f1b. https://par.nsf.gov/biblio/10148257.

@article{osti_10148257,
place = {Country unknown/Code not available}, title = {Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms}, url = {https://par.nsf.gov/biblio/10148257}, DOI = {10.7567/1347-4065/ab0f1b}, abstractNote = {}, journal = {Japanese Journal of Applied Physics}, volume = {58}, number = {SC}, author = {Li, Wenshen and Nomoto, Kazuki and Sundar, Aditya and Lee, Kevin and Zhu, Mingda and Hu, Zongyang and Beam, Edward and Xie, Jinqiao and Pilla, Manyam and Gao, Xiang and Rouvimov, Sergei and Jena, Debdeep and Xing, Huili Grace}, }