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Title: Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms
Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Award ID(s):
1719875
Publication Date:
NSF-PAR ID:
10148257
Journal Name:
Japanese Journal of Applied Physics
Volume:
58
Issue:
SC
Page Range or eLocation-ID:
SCCD15
ISSN:
0021-4922
Sponsoring Org:
National Science Foundation
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