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1. Indistinguishable photons from an artificial atom in silicon photonics

   https://doi.org/10.1038/s41467-024-51265-1  

   Komza, Lukasz; Samutpraphoot, Polnop; Odeh, Mutasem; Tang, Yu-Lung; Mathew, Milena; Chang, Jiu; Song, Hanbin; Kim, Myung-Ki; Xiong, Yihuang; Hautier, Geoffroy; et al (August 2024, Nature Communications)

   Abstract Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors. 

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2. Photon pair generation using a silicon photonic hybrid laser

   https://doi.org/10.1063/1.5040118  

   Wang, Xiaoxi; Ma, Chaoxuan; Kumar, Ranjeet; Doussiere, Pierre; Jones, Richard; Rong, Haisheng; Mookherjea, Shayan (August 2018, APL Photonics)

   We report photon pairs and heralded single photons generated at 1310 nm wavelengths using silicon photonics technology, demonstrating that comparable performance could be achieved when a silicon microring resonator was pumped either by a desktop laser instrument or by an electrically injected, room-temperature hybrid silicon laser. Measurements showed that 130 kilo-coincidence-counts per second pair rates could be generated, with coincidences-to-accidentals ratio approximately 100 at about 0.34 mW optical pump power and anti-bunching upon heralding with second-order intensity correlation g(2)(0) = 0.06 at about 0.9 mW optical pump power. These results suggest that hybrid silicon lasers, which are ultra-compact and wafer-scale manufacturable, could be used in place of packaged, stand-alone lasers for generating photon pairs at data communication wavelengths and enable large-scale, cost-effective manufacturing of integrated sources for quantum communications and computing. 

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3. Entangled photon pair generation in an integrated SiC platform

   https://doi.org/10.1038/s41377-024-01443-z  

   Rahmouni, Anouar; Wang, Ruixuan; Li, Jingwei; Tang, Xiao; Gerrits, Thomas; Slattery, Oliver; Li, Qing; Ma, Lijun (December 2024, Light: Science & Applications)

   Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, has remained elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9 ± 1) × 10³pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heraldedg⁽²⁾(0) on the order of 10⁻³, demonstrating the SiC platform as a prospective fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications. 

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4. Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

   Martin, Zachariah O Senichev (January 2023, arXivorg)

   A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2K to 300K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent homogeneous broadening of the zero-phonon lines. At 4.2K, spectral diffusion was found to be the main broadening mechanism, while time-resolved spectroscopy measurements revealed homogeneously broadened zero-phonon lines with instrument-limited linewidths. 

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5. Measurement of the helicity asymmetry $${\mathbb {E}}$$ for the $$\vec {\gamma }\vec {p} \rightarrow p \pi ^0$$ reaction in the resonance region: The CLAS Collaboration

   https://doi.org/10.1140/epja/s10050-023-01123-3  

   Kim, C. W.; Zachariou, N.; Bashkanov, M.; Briscoe, W. J.; Fegan, S.; Kashevarov, V. L.; Nikonov, K.; Sarantsev, A.; Schmidt, A.; Strakovsky, I. I.; et al (September 2023, The European Physical Journal A)

   The double-spin-polarization observable E for γ p → pπ0 has been measured with the CEBAF Large Acceptance Spectrometer (CLAS) at photon beam energies Eγ from 0.367 to 2.173 GeV (corresponding to center-ofmass energies from 1.240 to 2.200 GeV) for pion center-ofmass angles, cos θc.m. π0 , between − 0.86 and 0.82. These new CLAS measurements cover a broader energy range and have smaller uncertainties compared to previous CBELSA data and provide an important independent check on systematics. These measurements are compared to predictions as well as new global fits from The George Washington University, Mainz, and Bonn-Gatchina groups. Their inclusion in multipole analyses will allow us to refine our understanding of the single-pion production contribution to the Gerasimov-Drell- Hearn sum rule and improve the determination of resonance properties, which will be presented in a future publication. 

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