ABSTRACT AlN has the largest bandgap in the wurtzite III‐nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field‐effect transistors, analogous to silicon‐on‐insulator technology. Unlike /Si/, AlN/GaN/AlN can be grown fully epitaxially, enabling high carrier mobilities suitable for high‐frequency applications. However, developing these heterostructures and related devices has been hindered by challenges in strain management, polarization effects, defect control, and charge trapping. Here, the AlN single‐crystal high electron mobility transistor (XHEMT) is introduced, a new nitride transistor technology designed to address these issues. The XHEMT structure features a pseudomorphic GaN channel sandwiched between AlN layers, grown on single‐crystal AlN substrates. XHEMTs demonstrate RF performance on par with the state‐of‐the‐art GaN HEMTs, achieving 5.92 W/mm output power and 65% peak power‐added efficiency at 10 GHz under 17 V drain bias. These devices overcome several limitations present in conventional GaN HEMTs, which are grown on lattice‐mismatched foreign substrates that introduce undesirable dislocations and exacerbated thermal resistance. With the recent availability of 100‐mm AlN substrates and AlN's high thermal conductivity (340 W/), XHEMTs show strong potential for next‐generation RF electronics.
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Multiple Metamaterial Pattern Integration for Polarization Selective Photodetector Applications
ABSTRACT Interest in active metamaterial (MM) devices has recently increased due to their potential for tunable, switchable, and scalable optical responses. More specifically, a dynamic, on-chip MM polarizer has applications ranging from material characterization to sensing without the need for cumbersome external filters. This work demonstrates efforts to optimize MM devices for dynamic polarization filtering by combining elements from split-ring resonators, wire-pairs, and fishnet patterns. The polarization grid has been designed to operate under an applied voltage with simulated on/off ratios of 75% and dynamic polarization selectivity of 70%. Samples have been fabricated using epitaxial GaAs on sapphire with various n-type doping concentrations to approximate electrical tuning.
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- Award ID(s):
- 1806311
- PAR ID:
- 10152809
- Date Published:
- Journal Name:
- MRS Advances
- Volume:
- 3
- Issue:
- 33
- ISSN:
- 2059-8521
- Page Range / eLocation ID:
- 1907 to 1912
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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