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1. High internal quantum efficiency of long wavelength InGaN quantum wells

   https://doi.org/10.1063/5.0063237  

   Marcinkevičius, Saulius; Yapparov, Rinat; Chow, Yi_Chao; Lynsky, Cheyenne; Nakamura, Shuji; DenBaars, Steven_P; Speck, James_S (August 2021, Applied Physics Letters)

   Time-resolved and quasi-cw photoluminescence (PL) spectroscopy was applied to measure the internal quantum efficiency (IQE) of c-plane InGaN single quantum wells (QWs) grown on sapphire substrates using metal-organic chemical vapor deposition. The identical temperature dependence of the PL decay times and radiative recombination times at low temperatures confirmed that the low temperature IQE is 100%, which allowed evaluation of the absolute IQE at elevated temperatures. At 300 K, the IQE for QWs emitting in green and green–yellow spectral regions was more than 60%. The weak nonradiative recombination in QWs with a substantial concentration of threading dislocations and V-defects (∼2 × 108 cm−2) shows that these extended defects do not notably affect the carrier recombination. 

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2. Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces

   https://doi.org/10.1038/s41566-020-0641-x  

   Iyer, Prasad P.; DeCrescent, Ryan A.; Mohtashami, Yahya; Lheureux, Guillaume; Butakov, Nikita A.; Alhassan, Abdullah; Weisbuch, Claude; Nakamura, Shuji; DenBaars, Steven P.; Schuller, Jon. A. (September 2020, Nature Photonics)

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3. Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters

   https://doi.org/10.1109/IPCon.2018.8527308  

   Wei, Xiongliang; Muyeed, Syed Ahmed; Peart, Matthew; Tansu, Nelson; Wierer, Jonathan J. (September 2018, IEEE)
4. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition

   https://doi.org/10.1088/1361-6641/ab4b93  

   Reilly, Caroline E; Bonef, Bastien; Nakamura, Shuji; Speck, James S; DenBaars, Steven P; Keller, Stacia (December 2019, Semiconductor Science and Technology)
5. Improved LED output power and external quantum efficiency using InGaN templates

   https://doi.org/10.1063/5.0084273  

   Abdelhamid, Mostafa; Routh, Evyn L.; Hagar, Brandon; Bedair, S. M. (February 2022, Applied Physics Letters)

   InGaN templates have recently attracted interest due to their ability to reduce strain in the quantum wells and to induce a red shift in the emission wavelength. For such technology to be competitive, it should outperform the traditional technology for LEDs grown on GaN substrates and offer improved output characteristics. InGaN based LEDs on In_yGa_1−yN templates with varying In-content of 8% ≤ y ≤ 12% are studied for the same emission wavelength. The electroluminescence, optical output power, and external quantum efficiency of the LEDs are investigated as a function of the In-content in the templates. LEDs on InGaN templates with In-content of 8–10% show better performance than LEDs grown on GaN. This enhancement is attributed to improved radiative recombination as a result of the reduced strain in the quantum wells. However, templates with In-content of ∼10.5% and ∼11% show inferior performance to the LEDs on GaN because the deterioration from the increased defects from the template is stronger than the improvement in the radiative recombination. It can be concluded that the InGaN templates with 8–10% offer a technology for LEDs that is outperforming the traditional GaN technology. 

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