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Title: Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
Award ID(s):
1708227
NSF-PAR ID:
10155176
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Journal of Crystal Growth
Volume:
540
Issue:
C
ISSN:
0022-0248
Page Range / eLocation ID:
125652
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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