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1. Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators

   Parto, K.; Azzam, S. I.; Lewis, N.; Patel, S. D.; Umezawa, S.; Watanabe, K.; Taniguchi, T.; Moody, G. (June 2022, ArXivorg)

   Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency up to 46% at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by nearly an order-of-magnitude. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources. 

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2. Ultra-low loss quantum photonic circuits integrated with single quantum emitters

   https://doi.org/10.1038/s41467-022-35332-z  

   Chanana, Ashish; Larocque, Hugo; Moreira, Renan; Carolan, Jacques; Guha, Biswarup; Melo, Emerson G.; Anant, Vikas; Song, Jindong; Englund, Dirk; Blumenthal, Daniel J.; et al (December 2022, Nature Communications)

   Abstract The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si₃N₄photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical. 

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3. Ultrafast spectral diffusion of GaN defect single photon emitters

   https://doi.org/10.1063/5.0171855  

   Geng, Yifei; Nomoto, Kazuki (October 2023, Applied Physics Letters)

   Defect-based single photon emitters play an important role in quantum information technologies. Quantum emitters in technologically mature direct wide bandgap semiconductors, such as nitrides, are attractive for on-chip photonic integration. GaN has recently been reported to host bright and photostable defect single photon emitters in the 600–700 nm wavelength range. Spectral diffusion caused by local electric field fluctuation around the emitter limits the photon indistinguishability, which is a key requirement for quantum applications. In this work, we investigate the spectral diffusion properties of GaN defect emitters integrated with a solid immersion lens, employing both spectral domain and time domain techniques through spectroscopy and photon autocorrelation measurements at cryogenic temperature. Our results show that the GaN defect emitter at 10 K exhibits a Gaussian line shape with a linewidth of ∼1 meV while the spectral diffusion characteristic time falls within the range of a few hundred nanoseconds to a few microseconds. We study the dependency of the spectral diffusion rate and Gaussian linewidth on the excitation laser power. Our work provides insight into the ultrafast spectral diffusion in GaN defect-based single photon emitter systems and contributes toward harnessing the potential of these emitters for applications, especially for indistinguishable single photon generation. 

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4. Polariton creation in coupled cavity arrays with spectrally disordered emitters

   https://doi.org/10.1088/2633-4356/ad3b5d  

   Patton, J. T.; Norman, V. A.; Mann, E. C.; Puri, B.; Scalettar, R. T.; Radulaski, M. (April 2024, Materials for Quantum Technology)

   Abstract Integrated photonics has been a promising platform for analog quantum simulation of condensed matter phenomena in strongly correlated systems. To that end, we explore the implementation of all-photonic quantum simulators in coupled cavity arrays with integrated ensembles of spectrally disordered emitters. Our model is reflective of color center ensembles integrated into photonic crystal cavity arrays. Using the Quantum Master equation and the Effective Hamiltonian approaches, we study energy band formation and wavefunction properties in the open quantum Tavis–Cummings–Hubbard framework. We find conditions for polariton creation and (de)localization under experimentally relevant values of disorder in emitter frequencies, cavity resonance frequencies, and emitter-cavity coupling rates. To quantify these properties, we introduce two metrics, the polaritonic and nodal participation ratios, that characterize the light-matter hybridization and the node delocalization of the wavefunction, respectively. These new metrics combined with the Effective Hamiltonian approach prove to be a powerful toolbox for cavity quantum electrodynamical engineering of solid-state systems. 

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5. On-chip spin-orbit locking of quantum emitters in 2D materials for chiral emission

   https://doi.org/10.1364/OPTICA.463481  

   Ma, Yichen; Zhao, Haoqi; Liu, Na; Gao, Zihe; Mohajerani, Seyed_Sepehr; Xiao, Licheng; Hone, James; Feng, Liang; Strauf, Stefan (August 2022, Optica)

   Light carries both spin angular momentum (SAM) and orbital angular momentum (OAM), which can be used as potential degrees of freedom for quantum information processing. Quantum emitters are ideal candidates towards on-chip control and manipulation of the full SAM–OAM state space. Here, we show coupling of a spin-polarized quantum emitter in a monolayer ${\mathrm{W}\mathrm{S}\mathrm{e}}_2$with the whispering gallery mode of a ${\mathrm{S}\mathrm{i}}_3{\mathrm{N}}_4$ring resonator. The cavity mode carries a transverse SAM of $\mathrm{\sigma <\#comment/>}=\pm <\#comment/>1$in the evanescent regions, with the sign depending on the orbital power flow direction of the light. By tailoring the cavity–emitter interaction, we couple the intrinsic spin state of the quantum emitter to the SAM and propagation direction of the cavity mode, which leads to spin–orbit locking and subsequent chiral single-photon emission. Furthermore, by engineering how light is scattered from the WGM, we create a high-order Bessel beam which opens up the possibility to generate optical vortex carrying OAM states. 

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