skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: On-chip spin-orbit locking of quantum emitters in 2D materials for chiral emission
Light carries both spin angular momentum (SAM) and orbital angular momentum (OAM), which can be used as potential degrees of freedom for quantum information processing. Quantum emitters are ideal candidates towards on-chip control and manipulation of the full SAM–OAM state space. Here, we show coupling of a spin-polarized quantum emitter in a monolayer W S e 2 with the whispering gallery mode of a S i 3 N 4 ring resonator. The cavity mode carries a transverse SAM of σ<#comment/> = ±<#comment/> 1 in the evanescent regions, with the sign depending on the orbital power flow direction of the light. By tailoring the cavity–emitter interaction, we couple the intrinsic spin state of the quantum emitter to the SAM and propagation direction of the cavity mode, which leads to spin–orbit locking and subsequent chiral single-photon emission. Furthermore, by engineering how light is scattered from the WGM, we create a high-order Bessel beam which opens up the possibility to generate optical vortex carrying OAM states.  more » « less
Award ID(s):
1932803 1842612
PAR ID:
10369918
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optica
Volume:
9
Issue:
8
ISSN:
2334-2536
Format(s):
Medium: X Size: Article No. 953
Size(s):
Article No. 953
Sponsoring Org:
National Science Foundation
More Like this
  1. The mid-IR spectroscopic properties of E r 3 + doped low-phonon C s C d C l 3 and C s P b C l 3 crystals grown by the Bridgman technique have been investigated. Using optical excitations at ∼<#comment/> 800 n m and ∼<#comment/> 660 n m , both crystals exhibited IR emissions at ∼<#comment/> 1.55 , ∼<#comment/> 2.75 , ∼<#comment/> 3.5 , and ∼<#comment/> 4.5 µ<#comment/> m at room temperature. The mid-IR emission at 4.5 µm, originating from the 4 I 9 / 2 →<#comment/> 4 I 11 / 2 transition, showed a long emission lifetime of ∼<#comment/> 11.6 m s for E r 3 + doped C s C d C l 3 , whereas E r 3 + doped C s P b C l 3 exhibited a shorter lifetime of ∼<#comment/> 1.8 m s . The measured emission lifetimes of the 4 I 9 / 2 state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the 4 I 9 / 2 →<#comment/> 4 I 11 / 2 transition in E r 3 + doped C s C d C l 3 and C s P b C l 3 were determined to be ∼<#comment/> 0.14 ×<#comment/> 10 −<#comment/> 20 c m 2 and ∼<#comment/> 0.41 ×<#comment/> 10 −<#comment/> 20 c m 2 , respectively. The results of Judd–Ofelt analysis are presented and discussed. 
    more » « less
  2. In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic A l x G a ( 1 −<#comment/> x ) N strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by ∼<#comment/> 220 %<#comment/> , reduces electron leakage by ∼<#comment/> 11 times, and enhances optical power by ∼<#comment/> 225 %<#comment/> at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of ∼<#comment/> 61.5 %<#comment/> which is ∼<#comment/> 72 %<#comment/> higher, and IQE droop is ∼<#comment/> 12.4 %<#comment/> , which is ∼<#comment/> 333 %<#comment/> less compared to the conventional AlGaN EBL LED structure at ∼<#comment/> 284.5 n m wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 
    more » « less
  3. In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ( ≈<#comment/> 60 d B for TE and ≈<#comment/> 48 d B for TM) with a compact coupling length ( ≈<#comment/> 14.5 µ<#comment/> m ). The insertion loss is also negligible ( <<#comment/> 0.6 d B ). The bandwidth is ><#comment/> 80 (30) nm for the TE (TM) extinction ratio ><#comment/> 20 d B . Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing. 
    more » « less
  4. We present the optical and structural characterization of films of T a 2 O 5 , S c 2 O 3 , and S c 2 O 3 doped T a 2 O 5 with a cation ratio around 0.1 grown by reactive sputtering. The addition of S c 2 O 3 as a dopant induces the formation of tantalum suboxide due to the “oxygen getter” property of scandium. The presence of tantalum suboxide greatly affects the optical properties of the coating, resulting in higher absorption loss at λ<#comment/> = 1064 n m . The refractive index and optical band gap of the mixed film do not correspond to those of a mixture of T a 2 O 5 and S c 2 O 3 , given the profound structural modifications induced by the dopant. 
    more » « less
  5. Cross-platform observing systems are requisite to capturing the temporal and spatial dynamics of particles in the ocean. We present simultaneous observations of bulk optical properties, including the particulate beam attenuation ( c p ) and backscattering ( b bp ) coefficients, and particle size distributions collected in the North Pacific Subtropical Gyre. Clear and coherent diel cycles are observed in all bulk and size-fractionated optical proxies for particle biomass. We show evidence linking diurnal increases in c p and b bp to daytime particle growth and division of cells, with particles <<#comment/> 7 µ<#comment/> m driving the daily cycle of particle production and loss within the mixed layer. Flow cytometry data reveal the nitrogen-fixing cyanobacteriumCrocosphaera( ∼<#comment/> 4 −<#comment/> 7 µ<#comment/> m ) to be an important driver of c p at the time of sampling, whereasProchlorococcusdynamics ( ∼<#comment/> 0.5 µ<#comment/> m ) were essential to reproducing temporal variability in b bp . This study is a step towards improved characterization of the particle size range represented byin situbulk optical properties and a better understanding of the mechanisms that drive variability in particle production in the oligotrophic open ocean. 
    more » « less