MOCVD epitaxy of β -(Al x Ga 1−x ) 2 O 3 thin films on (010) Ga 2 O 3 substrates and N-type doping
                        
                    - Award ID(s):
- 1810041
- PAR ID:
- 10158552
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 115
- Issue:
- 12
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 120602
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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