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Title: MOCVD epitaxy of β -(Al x Ga 1−x ) 2 O 3 thin films on (010) Ga 2 O 3 substrates and N-type doping
Award ID(s):
1810041
PAR ID:
10158552
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
115
Issue:
12
ISSN:
0003-6951
Page Range / eLocation ID:
120602
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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