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1. Band offsets of (100) β -(Al _x Ga _1−x ) ₂ O ₃ / β -Ga ₂ O ₃ heterointerfaces grown via MOCVD

   https://doi.org/10.1063/5.0031584  

   Bhuiyan, A F; Feng, Zixuan; Johnson, Jared M.; Huang, Hsien-Lien; Hwang, Jinwoo; Zhao, Hongping (December 2020, Applied Physics Letters)

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2. MOCVD epitaxy of β -(Al _x Ga _1−x ) ₂ O ₃ thin films on (010) Ga ₂ O ₃ substrates and N-type doping

   https://doi.org/10.1063/1.5123495  

   Anhar Uddin Bhuiyan, A F; Feng, Zixuan; Johnson, Jared M.; Chen, Zhaoying; Huang, Hsien-Lien; Hwang, Jinwoo; Zhao, Hongping (September 2019, Applied Physics Letters)
3. Hydrogen centers as a probe of V _Ga(2) defects in β -Ga ₂ O ₃

   https://doi.org/10.1063/5.0138904  

   Portoff, Amanda; Stavola, Michael; Fowler, W. Beall; Pearton, Stephen J.; Glaser, Evan R. (February 2023, Applied Physics Letters)

   While a number of O-H and O-D vibrational lines have been observed for hydrogen and deuterium in β-Ga 2 O 3 , it has been commonly reported that there is no absorption with a component of the polarization E parallel to the [010], or b, axis. This experimental result has led to O-H defect structures that involve shifted configurations of a vacancy at the tetrahedrally coordinated Ga(1) site [V Ga(1) ] and have ruled out structures that involve a vacancy at the octahedrally coordinated Ga(2) site [V Ga(2) ], because these structures are predicted to show absorption for E//[010]. In this Letter, weak O-D lines at 2475 and 2493 cm −1 with a component of their polarization with E//[010] are reported for β-Ga 2 O 3 that had been annealed in a D 2 ambient. O-D defect structures involving an unshifted V Ga(2) are proposed for these centers. An estimate is made that the concentration of V Ga(2) in a Czochralski-grown sample is 2–3 orders of magnitude lower than that of V Ga(1) from the intensities of the IR absorption lines. 

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4. Longitudinal phonon plasmon mode coupling in β -Ga ₂ O ₃

   https://doi.org/10.1063/1.5089145  

   Schubert, Mathias; Mock, Alyssa; Korlacki, Rafał; Knight, Sean; Galazka, Zbigniew; Wagner, Günther; Wheeler, Virginia; Tadjer, Marko; Goto, Ken; Darakchieva, Vanya (March 2019, Applied Physics Letters)
5. A perspective on β -Ga ₂ O ₃ micro/nanoelectromechanical systems

   https://doi.org/10.1063/5.0073005  

   Zheng, Xu-Qian; Zhao, Hongping; Feng, Philip X.-L. (January 2022, Applied Physics Letters)