Meng, Jingjia, Zhao, Bingyuan, Xu, Qiyun, Goodwill, Jonathan M., Bain, James A., and Skowronski, Marek. Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation. Journal of Applied Physics 127.23 Web. doi:10.1063/5.0010882.

Meng, Jingjia, Zhao, Bingyuan, Xu, Qiyun, Goodwill, Jonathan M., Bain, James A., & Skowronski, Marek. Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation. Journal of Applied Physics, 127 (23). https://doi.org/10.1063/5.0010882

Meng, Jingjia, Zhao, Bingyuan, Xu, Qiyun, Goodwill, Jonathan M., Bain, James A., and Skowronski, Marek. "Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation". Journal of Applied Physics 127 (23). Country unknown/Code not available: American Institute of Physics. https://doi.org/10.1063/5.0010882. https://par.nsf.gov/biblio/10162902.

@article{osti_10162902,
place = {Country unknown/Code not available}, title = {Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation}, url = {https://par.nsf.gov/biblio/10162902}, DOI = {10.1063/5.0010882}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {127}, number = {23}, publisher = {American Institute of Physics}, author = {Meng, Jingjia and Zhao, Bingyuan and Xu, Qiyun and Goodwill, Jonathan M. and Bain, James A. and Skowronski, Marek}, }