Feng, Tao, Shterengas, Leon, Hosoda, Takashi, Kipshidze, Gela, Belyanin, Alexey, Teng, Chu C., Westberg, Jonas, Wysocki, Gerard, and Belenky, Gregory. Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers. Retrieved from https://par.nsf.gov/biblio/10163224. Journal of Lightwave Technology 38.7 Web. doi:10.1109/JLT.2020.2971605.

Feng, Tao, Shterengas, Leon, Hosoda, Takashi, Kipshidze, Gela, Belyanin, Alexey, Teng, Chu C., Westberg, Jonas, Wysocki, Gerard, & Belenky, Gregory. Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers. Journal of Lightwave Technology, 38 (7). Retrieved from https://par.nsf.gov/biblio/10163224. https://doi.org/10.1109/JLT.2020.2971605

Feng, Tao, Shterengas, Leon, Hosoda, Takashi, Kipshidze, Gela, Belyanin, Alexey, Teng, Chu C., Westberg, Jonas, Wysocki, Gerard, and Belenky, Gregory. "Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers". Journal of Lightwave Technology 38 (7). Country unknown/Code not available. https://doi.org/10.1109/JLT.2020.2971605. https://par.nsf.gov/biblio/10163224.

@article{osti_10163224,
place = {Country unknown/Code not available}, title = {Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers}, url = {https://par.nsf.gov/biblio/10163224}, DOI = {10.1109/JLT.2020.2971605}, abstractNote = {}, journal = {Journal of Lightwave Technology}, volume = {38}, number = {7}, author = {Feng, Tao and Shterengas, Leon and Hosoda, Takashi and Kipshidze, Gela and Belyanin, Alexey and Teng, Chu C. and Westberg, Jonas and Wysocki, Gerard and Belenky, Gregory}, }