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Award ID contains: 1708873

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  1. ; ; ; ; ; (, Optics Letters)
    Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ∼<#comment/> 850 m W in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10 meV. 
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  2. ; ; ; ; ; (, IEEE Photonics Technology Letters)
    null (Ed.)
    Full Text Available 
  3. ; ; ; ; ; ; ; ; (, Journal of Lightwave Technology)
    Full Text Available 
  4. ; ; ; ; ; ; (, Conference on Lasers and Electro-Optics, OSA Technical Digest)
    The DBR diode lasers with asymmetric tunnel coupled quantum wells having built-in resonant second order nonlinearity were designed and fabricated. The devices can generate comparable power in two bands near 2 um separated by ~13 meV as required for intracavity difference frequency generation. 
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  5. ; ; ; ; (, ACS Photonics)
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  6. ; ; ; ; ; (, Applied Physics Letters)