A green‐emitting perovskite first‐order distributed feedback (DFB) laser based on the methylammonium lead bromide (MAPbBr3) with high stability is demonstrated for the first time. The laser achieves stable lasing at 550 nm with a full width at half maximum of 0.4 nm. Low lasing threshold of 60 μJ cm−2under nanosecond pulsed excitation and 3.1 μJ cm−2under femtosecond pulsed excitation is observed, showing a much lower lasing threshold compared with the second‐order DFB cavities, which are fabricated on the same substrate. By optimizing the antisolvent treatment and encapsulating with poly(methyl methacrylate), the laser lifetime, resistance to moisture, lasing threshold, and intensity are significantly improved. The lasers are fabricated with a complementary metal‐oxide‐semiconductor‐compatible process, thus offer promising potential for the integrated photonic devices.
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The GaSb-based Y-branch DBR and photonic crystal lasers (invited conference presentation)
We report on development of the mid-infrared antimonide based laser technology targeting dual wavelength operation for intra-cavity difference frequency generation. The devices utilize Y-branch architecture with high order DBR reflectors controlling the laser emission spectrum. The device active region contain asymmetric tunnel coupled quantum well with built in resonant second order nonlinearity. The epitaxially regrown photonic crystal surface emitting GaSb-based lasers will be demonstrated.
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- Award ID(s):
- 1707317
- PAR ID:
- 10163279
- Date Published:
- Journal Name:
- Novel In-Plane Semiconductor Lasers XIX; 113011M (2020)
- Volume:
- 11301
- Page Range / eLocation ID:
- 56
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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