Gate-tunable metafilm absorber based on indium silicon oxide
Abstract In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.
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- Award ID(s):
- 1709704
- PAR ID:
- 10164827
- Date Published:
- Journal Name:
- Nanophotonics
- Volume:
- 8
- Issue:
- 10
- ISSN:
- 2192-8614
- Page Range / eLocation ID:
- 1803 to 1810
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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