Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
- Award ID(s):
- 1808900
- NSF-PAR ID:
- 10166223
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 115
- Issue:
- 15
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 153503
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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