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Title: Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Award ID(s):
1808900
Publication Date:
NSF-PAR ID:
10166223
Journal Name:
Applied Physics Letters
Volume:
115
Issue:
15
Page Range or eLocation-ID:
153503
ISSN:
0003-6951
Sponsoring Org:
National Science Foundation
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