skip to main content

Title: Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
Authors:
 ;  ;  ;  ;  ;  ;  ;  ;  
Publication Date:
NSF-PAR ID:
10171467
Journal Name:
Journal of Applied Physics
Volume:
128
Issue:
2
Page Range or eLocation-ID:
Article No. 025703
ISSN:
0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found