Zabihi, Masoud, Sharma, Arvind K., Mankalale, Meghna G., Chowdhury, Zamshed Iqbal, Zhao, Zhengyang, Resch, Salonik, Karpuzcu, Ulya R., Wang, Jian-Ping, and Sapatnekar, Sachin S. Analyzing the Effects of Interconnect Parasitics in the STT CRAM In-Memory Computational Platform. Retrieved from https://par.nsf.gov/biblio/10173729. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6.1 Web. doi:10.1109/JXCDC.2020.2985314.

Zabihi, Masoud, Sharma, Arvind K., Mankalale, Meghna G., Chowdhury, Zamshed Iqbal, Zhao, Zhengyang, Resch, Salonik, Karpuzcu, Ulya R., Wang, Jian-Ping, & Sapatnekar, Sachin S. Analyzing the Effects of Interconnect Parasitics in the STT CRAM In-Memory Computational Platform. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 6 (1). Retrieved from https://par.nsf.gov/biblio/10173729. https://doi.org/10.1109/JXCDC.2020.2985314

Zabihi, Masoud, Sharma, Arvind K., Mankalale, Meghna G., Chowdhury, Zamshed Iqbal, Zhao, Zhengyang, Resch, Salonik, Karpuzcu, Ulya R., Wang, Jian-Ping, and Sapatnekar, Sachin S. "Analyzing the Effects of Interconnect Parasitics in the STT CRAM In-Memory Computational Platform". IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 6 (1). Country unknown/Code not available. https://doi.org/10.1109/JXCDC.2020.2985314. https://par.nsf.gov/biblio/10173729.

@article{osti_10173729,
place = {Country unknown/Code not available}, title = {Analyzing the Effects of Interconnect Parasitics in the STT CRAM In-Memory Computational Platform}, url = {https://par.nsf.gov/biblio/10173729}, DOI = {10.1109/JXCDC.2020.2985314}, abstractNote = {}, journal = {IEEE Journal on Exploratory Solid-State Computational Devices and Circuits}, volume = {6}, number = {1}, author = {Zabihi, Masoud and Sharma, Arvind K. and Mankalale, Meghna G. and Chowdhury, Zamshed Iqbal and Zhao, Zhengyang and Resch, Salonik and Karpuzcu, Ulya R. and Wang, Jian-Ping and Sapatnekar, Sachin S.}, }