skip to main content

Explore Research Products in the NSF-PAR

Title: Manufacturing strategies for wafer-scale two-dimensional transition metal dichalcogenide heterolayers
Modern electronics have been geared toward exploring novel electronic materials that can encompass a broad set of unusual functionalities absent in conventional platforms. In this regard, two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors are highly promising, owing to their large mechanical resilience coupled with superior transport properties and van der Waals (vdW) attraction-enabled relaxed assembly. Moreover, 2D TMD heterolayers based on chemically distinct constituent layers exhibit even more intriguing properties beyond their mono-component counterparts, which can materialize only when they are manufactured on a technologically practical wafer-scale. This mini-review provides a comprehensive overview of recent progress in exploring wafer-scale 2D TMD heterolayers of various kinds. It extensively surveys a variety of manufacturing strategies and discusses their scientific working principles, resulting 2D TMD heterolayers, their material properties, and device applications. Moreover, it offers extended discussion on remaining challenges and future outlooks toward further improving the material quality of 2D TMD heterolayers in both material and manufacturing aspects.  more » « less
Award ID(s):
1728309
NSF-PAR ID:
10176622
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Materials Research
Volume:
35
Issue:
11
ISSN:
0884-2914
Page Range / eLocation ID:
1350 to 1368
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; ; ; ; ; ( , Nanoscale)
    null (Ed.)
    Two-dimensional (2D) transition metal dichalcogenide (TMD) layers have gained increasing attention for a variety of emerging electrical, thermal, and optical applications. Recently developed metallic 2D TMD layers have been projected to exhibit unique attributes unattainable in their semiconducting counterparts; e.g. , much higher electrical and thermal conductivities coupled with mechanical flexibility. In this work, we explored 2D platinum ditelluride (2D PtTe 2 ) layers – a relatively new class of metallic 2D TMDs – by studying their previously unexplored electro-thermal properties for unconventional window applications. We prepared wafer-scale 2D PtTe 2 layer-coated optically transparent and mechanically flexible willow glasses via a thermally-assisted tellurization of Pt films at a low temperature of 400 °C. The 2D PtTe 2 layer-coated windows exhibited a thickness-dependent optical transparency and electrical conductivity of >10 6 S m −1 – higher than most of the previously explored 2D TMDs. Upon the application of electrical bias, these windows displayed a significant increase in temperature driven by Joule heating as confirmed by the infrared (IR) imaging characterization. Such superior electro-thermal conversion efficiencies inherent to 2D PtTe 2 layers were utilized to demonstrate various applications, including thermochromic displays and electrically-driven defogging windows accompanying mechanical flexibility. Comparisons of these performances confirm the superiority of the wafer-scale 2D PtTe 2 layers over other nanomaterials explored for such applications. 
    more » « less
  2. ; ; ( , Advanced Functional Materials)
    Abstract

    Manipulation and structural modifications of 2D materials for nanoelectronic and nanofluidic applications remain obstacles to their industrial‐scale implementation. Here, it is demonstrated that a 30 kV focused ion beam can be utilized to engineer defects and tailor the atomic, optoelectronic, and structural properties of monolayer transition metal dichalcogenides (TMDs). Aberration‐corrected scanning transmission electron microscopy is used to reveal the presence of defects with sizes from the single atom to 50 nm in molybdenum (MoS2) and tungsten disulfide (WS2) caused by irradiation doses from 1013to 1016ions cm−2. Irradiated regions across millimeter‐length scales of multiple devices are sampled and analyzed at the atomic scale in order to obtain a quantitative picture of defect sizes and densities. Precise dose value calculations are also presented, which accurately capture the spatial distribution of defects in irradiated 2D materials. Changes in phononic and optoelectronic material properties are probed via Raman and photoluminescence spectroscopy. The dependence of defect properties on sample parameters such as underlying substrate and TMD material is also investigated. The results shown here lend the way to the fabrication and processing of TMD nanodevices.

     
    more » « less
  3. ; ; ; ; ; ; ; ; ( , Scientific Reports)
    Abstract

    Two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers present an unusually ideal combination of excellent opto-electrical properties and mechanical tolerance projecting high promise for a wide range of emerging applications, particularly in flexible and stretchable devices. The prerequisite for realizing such opportunities is to reliably integrate large-area 2D TMDs of well-defined dimensions on mechanically pliable materials with targeted functionalities by transferring them from rigid growth substrates. Conventional approaches to overcome this challenge have been limited as they often suffer from the non-scalable integration of 2D TMDs whose structural and chemical integrity are altered through toxic chemicals-involved processes. Herein, we report a generic and reliable strategy to achieve the layer-by-layer integration of large-area 2D TMDs and their heterostructure variations onto a variety of unconventional substrates. This new 2D layer integration method employs water only without involving any other chemicals, thus renders distinguishable advantages over conventional approaches in terms of material property preservation and integration size scalability. We have demonstrated the generality of this method by integrating a variety of 2D TMDs and their heterogeneously-assembled vertical layers on exotic substrates such as plastics and papers. Moreover, we have verified its technological versatility by demonstrating centimeter-scale 2D TMDs-based flexible photodetectors and pressure sensors which are difficult to fabricate with conventional approaches. Fundamental principles for the water-assisted spontaneous separation of 2D TMD layers are also discussed.

     
    more » « less
  4. ; ; ; ; ; ; ; ; ; ( , Nanotechnology)
    Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials. 
    more » « less
  5. ; ; ; ; ; ; ; ; ; ; et al ( , Science)

    Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.

     
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email