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In this contribution, we use heavy ion irradiation and photoluminescence (PL) spectroscopy to demonstrate that defects can be used to tailor the optical properties of two-dimensional molybdenum disulfide (MoS 2 ). Sonicated MoS 2 flakes were deposited onto Si/SiO 2 substrate and subjected to 3 MeV Au 2+ ion irradiation at room temperature to fluences ranging from 1 × 10 12 to 1 × 10 16 cm −2 . We demonstrate that irradiation-induced defects can control optical excitations in the inner core shell of MoS 2 by binding A 1s - and B 1s -excitons, and correlate the exciton peaks to the specific defects introduced with irradiation. The systematic increase of ion fluence produced different defect densities in MoS 2 , which were estimated using B/A exciton ratios and progressively increased with ion fluence. We show that up to the fluences of 1 × 10 14 cm −2 , the MoS 2 lattice remains crystalline and defect densities can be controlled, whereas at higher fluences (≥1 × 10 15 cm −2 ), the large number of introduced defects distorts the excitonic structure of the material. In addition to controlling excitons, defects were used to split bound and free trions, and we demonstrate that at higher fluences (1 × 10 15 cm −2 ), both free and bound trions can be observed in the same PL spectrum. Most importantly, the lifetimes of these states exceed trion and exciton lifetimes in pristine MoS 2 , and PL spectra of irradiated MoS 2 remains unchanged weeks after irradiation experiments. Thus, this work demonstrated the feasibility of engineering novel optical behaviors in low-dimensional materials using heavy ion irradiation. The insights gained from this study will aid in understanding the many-body interactions in low-dimensional materials and may ultimately be used to develop novel materials for optoelectronic applications.
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Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification
Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.
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- PAR ID:
- 10412492
- Date Published:
- Journal Name:
- Nanotechnology
- Volume:
- 34
- Issue:
- 8
- ISSN:
- 0957-4484
- Page Range / eLocation ID:
- 085702
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1088/1361-6528/aca3af
