Cywar, Adam, Woods, Zachary, Kim, SangBum, BrightSky, Matt, Sosa, Norma, Zhu, Yu, Kim, Hyeong Soo, Kim, Hyung Keun, Lam, Chung, Gokirmak, Ali, and Silva, Helena. Modeling of void formation in phase change memory devices. Retrieved from https://par.nsf.gov/biblio/10177966. Solid-State Electronics 164.C Web. doi:10.1016/j.sse.2019.107684.

Cywar, Adam, Woods, Zachary, Kim, SangBum, BrightSky, Matt, Sosa, Norma, Zhu, Yu, Kim, Hyeong Soo, Kim, Hyung Keun, Lam, Chung, Gokirmak, Ali, & Silva, Helena. Modeling of void formation in phase change memory devices. Solid-State Electronics, 164 (C). Retrieved from https://par.nsf.gov/biblio/10177966. https://doi.org/10.1016/j.sse.2019.107684

Cywar, Adam, Woods, Zachary, Kim, SangBum, BrightSky, Matt, Sosa, Norma, Zhu, Yu, Kim, Hyeong Soo, Kim, Hyung Keun, Lam, Chung, Gokirmak, Ali, and Silva, Helena. "Modeling of void formation in phase change memory devices". Solid-State Electronics 164 (C). Country unknown/Code not available. https://doi.org/10.1016/j.sse.2019.107684. https://par.nsf.gov/biblio/10177966.

@article{osti_10177966,
place = {Country unknown/Code not available}, title = {Modeling of void formation in phase change memory devices}, url = {https://par.nsf.gov/biblio/10177966}, DOI = {10.1016/j.sse.2019.107684}, abstractNote = {}, journal = {Solid-State Electronics}, volume = {164}, number = {C}, author = {Cywar, Adam and Woods, Zachary and Kim, SangBum and BrightSky, Matt and Sosa, Norma and Zhu, Yu and Kim, Hyeong Soo and Kim, Hyung Keun and Lam, Chung and Gokirmak, Ali and Silva, Helena}, }