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1. Transition to an excitonic insulator from a two-dimensional conventional insulator

   https://doi.org/10.1103/PhysRevB.107.075105  

   Manousakis, Efstratios (February 2023, Physical Review B)
2. Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

   https://doi.org/10.1002/qute.202000142  

   McLaughlin, Nathan_J; Kalcheim, Yoav; Suceava, Albert; Wang, Hailong; Schuller, Ivan_K; Du, Chunhui_Rita (March 2021, Advanced Quantum Technologies)

   Abstract Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV‐based local sensing of the electrically driven insulator‐to‐metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion‐irradiated VO₂thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe thelocaltemperature and magnetic field in electrically biased VO₂devices, which are in agreement with theglobaltransport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion‐irradiated devices, the transition occurs nonthermally, well below the transition temperature. The results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials. 

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3. Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

   https://doi.org/10.1021/acs.nanolett.0c03195  

   Li, Peng; Ding, Jinjun; Zhang, Steven S.-L.; Kally, James; Pillsbury, Timothy; Heinonen, Olle G.; Rimal, Gaurab; Bi, Chong; DeMann, August; Field, Stuart B.; et al (December 2020, Nano Letters)

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4. Magnonic analog of a metal-to-insulator transition in a multiferroic heterostructure

   https://doi.org/10.1063/5.0250690  

   Micaletti, P.; Roxburgh, A.; Iacocca, E.; Marzolla, M.; Montoncello, F. (April 2025, Journal of Applied Physics)

   We show how, by changing the polarization value of ferroelectric domains, it is possible to tune the magnon conductivity in the ferromagnetic film layer of a multiferroic magnonic system. In particular, we suggest how to switch from a metal behavior (zero frequency gap and linear frequency-wavevector dispersion) to an insulator behavior (around 1 GHz frequency gap and parabolic dispersion). The ferroelectric film is prepared with a sequence of ferroelectric domains with a periodic variation of their polarization direction. Through inverse magnetostriction, they induce in the ferromagnetic layer a periodic magnetic anisotropy and a consequent sinusoidal magnetization. The amplitude of the sinusoidal magnetization can be varied by varying the induced magnetic anisotropy. This allows for a fine and reversible control over the curvature of the dispersion relations at the Brillouin zone boundary, as well as the width of the frequency gap. We suggest the extension of Dirac’s magnon picture to our system, finding interesting implications in terms of magnon mobility. This work expands the possible implementations of the voltage-controlled-bandgap meta-materials, marks the conditions for the occurrence of a magnonic metal behavior in a ferromagnetic film, and outlines how a same unpatterned film can be reversibly turned from a magnonic metal to a magnonic insulator. 

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5. Fermi level dependent spin pumping from a magnetic insulator into a topological insulator

   https://doi.org/10.1103/PhysRevResearch.1.012014  

   Wang, Hailong; Kally, James; Şahin, Cüneyt; Liu, Tao; Yanez, Wilson; Kamp, Eric J.; Richardella, Anthony; Wu, Mingzhong; Flatté, Michael E.; Samarth, Nitin (August 2019, Physical Review Research)