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1. GaN-based Mach-Zehnder Modulators for Highly Efficient Optical Modulation and Switching Applications

   Su, Patrick ; Carlson, John ; and Dallesasse, John ( September 2018 , SRC TECHCON)

   The recent development of 8-in Gallium Nitride on Silicon (GaN-on-Si) wafers has facilitated cost effective, large-scale manufacturability of GaN-based electronics. Leveraging its wide band gap, capability to support a two dimensional electron gas (2DEG) layer, and strong built-in polarization effects, GaN-based electronic devices have become a viable cost-effective successor to silicon-based devices for high-performance applications where the large bandgap and high breakdown field are required. The advantageous properties of GaN-on-Si material, however, have yet to be utilized for photonic integrated circuit applications. Therefore, the exploration of GaN for efficient on-chip optical modulation and switching applications is examined. In order to effectively characterize GaN’s capabilities for optical modulation and switching, GaN-based Mach-Zehnder modulators are designed and fabricated. Through simulating the propagating optical modes supported in a GaN-based Mach-Zehnder structure, the geometry of the device is designed to optimize optical modal overlap with the 2DEG layer while maintaining single-mode performance. Through electrical and optical characterization, the effective electro-optic coefficient and Vπ length are measured. These measurements provide a method of benchmarking GaN-based photonic devices for their optical modulation and switching efficiency. 

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2. Non-volatile electrically programmable integrated photonics with a 5-bit operation

   https://doi.org/10.1038/s41467-023-39180-3  

   Chen, Rui ; Fang, Zhuoran ; Perez, Christopher ; Miller, Forrest ; Kumari, Khushboo ; Saxena, Abhi ; Zheng, Jiajiu ; Geiger, Sarah J. ; Goodson, Kenneth E. ; Majumdar, Arka ( December 2023 , Nature Communications)

   Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb₂S₃)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb₂S₃-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of$$\sim 10\,{fJ}/n{m}^{3}$$$~10fJ/n{m}^3$. Remarkably, Sb₂S₃is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

    

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3. Modular chip-integrated photonic control of artificial atoms in diamond waveguides

   https://doi.org/10.1364/OPTICA.486361  

   Palm, Kevin J. ; Dong, Mark ; Golter, D. Andrew ; Clark, Genevieve ; Zimmermann, Matthew ; Chen, Kevin C. ; Li, Linsen ; Menssen, Adrian ; Leenheer, Andrew J. ; Dominguez, Daniel ; et al ( May 2023 , Optica)

   A central goal in creating long-distance quantum networks and distributed quantum computing is the development of interconnected and individually controlled qubit nodes. Atom-like emitters in diamond have emerged as a leading system for optically networked quantum memories, motivating the development of visible-spectrum, multi-channel photonic integrated circuit (PIC) systems for scalable atom control. However, it has remained an open challenge to realize optical programmability with a qubit layer that can achieve high optical detection probability over many optical channels. Here, we address this problem by introducing a modular architecture of piezoelectrically actuated atom-control PICs (APICs) and artificial atoms embedded in diamond nanostructures designed for high-efficiency free-space collection. The high-speed four-channel APIC is based on a splitting tree mesh with triple-phase shifter Mach–Zehnder interferometers. This design simultaneously achieves optically broadband operation at visible wavelengths, high-fidelity switching (>40dB) at low voltages, submicrosecond modulation timescales (>30MHz), and minimal channel-to-channel crosstalk for repeatable optical pulse carving. Via a reconfigurable free-space interconnect, we use the APIC to address single silicon vacancy color centers in individual diamond waveguides with inverse tapered couplers, achieving efficient single photon detection probabilities (∼15%) and second-order autocorrelation measurementsg⁽²⁾(0)<0.14 for all channels. The modularity of this distributed APIC–quantum memory system simplifies the quantum control problem, potentially enabling further scaling to thousands of channels.

    

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4. High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

   https://doi.org/10.1038/s41566-021-00903-x  

   Dong, Mark ; Clark, Genevieve ; Leenheer, Andrew J. ; Zimmermann, Matthew ; Dominguez, Daniel ; Menssen, Adrian J. ; Heim, David ; Gilbert, Gerald ; Englund, Dirk ; Eichenfield, Matt ( December 2021 , Nature Photonics)

   Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations onNinput/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

    

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5. Low-loss composite photonic platform based on 2D semiconductor monolayers

   Ipshita Datta, Sang Hoon ( January 2020 , Nature photographer)

   Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping1–21. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances22–26. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light -matter interaction with the monolayer. We dope the monolayer to carrier densities of (7.2 ± 0.8) × 1013 cm-2, by electrically gating the TMD using an ionic liquid [P14+] [FAP-]. We show strong electro-refractive response in monolayer tungsten disulphide (WS2) at NIR wavelengths by measuring a large change in the real part of refractive index ∆n = 0.53, with only a minimal change in the imaginary part ∆k = 0.004. We demonstrate photonic devices based on electrostatically gated SiN-WS2 phase modulator with high efficiency ( ) of 0.8 V · cm. We show that the induced phase change relative to the change in absorption (i.e. ∆n/∆k) is approximately 125, that is significantly higher than the ones achieved in 2D materials at different spectral ranges and in bulk materials, commonly employed for silicon photonic modulators such as Si and III-V on Si, while accompanied by negligible insertion loss. Efficient phase modulators are critical for enabling large-scale photonic systems for applications such as Light Detection and Ranging (LIDAR), phased arrays, optical switching, coherent optical communication and quantum and optical neural networks27–30. 

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