Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb2S3)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb2S3-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of
This content will become publicly available on December 1, 2025
Programmable photonic integrated circuits (PICs) consisting of reconfigurable on-chip optical components have been creating new paradigms in various applications, such as integrated spectroscopy, multi-purpose microwave photonics, and optical information processing. Among many reconfiguration mechanisms, non-volatile chalcogenide phase-change materials (PCMs) exhibit a promising approach to the future very-large-scale programmable PICs, thanks to their zero static power and large optical index modulation, leading to extremely low energy consumption and ultra-compact footprints. However, the scalability of the current PCM-based programmable PICs is still limited since they are not directly off-the-shelf in commercial photonic foundries now. Here, we demonstrate a scalable platform harnessing the mature and reliable 300 mm silicon photonic fab, assisted by an in-house wide-bandgap PCM (Sb2S3) integration process. We show various non-volatile programmable devices, including micro-ring resonators, Mach-Zehnder interferometers and asymmetric directional couplers, with low loss (~0.0044 dB/µm), large phase shift (~0.012 π/µm) and high endurance (>5000 switching events with little performance degradation). Moreover, we showcase this platform’s capability of handling relatively complex structures such as multiple PIN diode heaters in devices, each independently controlling an Sb2S3segment. By reliably setting the Sb2S3segments to fully amorphous or crystalline state, we achieved deterministic multilevel operation. An asymmetric directional coupler with two unequal-length Sb2S3segments showed the capability of four-level switching, beyond cross-and-bar binary states. We further showed unbalanced Mach-Zehnder interferometers with equal-length and unequal-length Sb2S3segments, exhibiting reversible switching and a maximum of 5 (
- Award ID(s):
- 2329089
- PAR ID:
- 10538288
- Publisher / Repository:
- NPJ Nanophotonics
- Date Published:
- Journal Name:
- npj Nanophotonics
- Volume:
- 1
- Issue:
- 1
- ISSN:
- 2948-216X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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