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1. Thermodynamically-informed Air-based Soft Heat Engine Design

   Charles Xiao, Luke F. ( January 2021 , ArXivorg)

   null (Ed.)

   Soft heat engines are poised to play a vital role in future soft robots due to their easy integration into soft structures and low-voltage power requirements. Recent works have demonstrated soft heat engines relying on liquid-to-gas phase change materials. However, despite the fact that many soft robots have air as a primary component, soft air cycles are not a focus of the field. In this paper, we develop theory for air-based soft heat engines design and efficiency, and demonstrate experimentally that efficiency can be improved through careful cycle design. We compare a simple constant-load cycle to a designed decreasing-load cycle, inspired by the Otto cycle. While both efficiencies are relatively low, the Otto-like cycle improves efficiency by a factor of 11.3, demonstrating the promise of this approach. Our results lay the foundation for the development of air-based soft heat engines as a new option for powering soft robots. 

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2. Unraveling the Stable Cathode Electrolyte Interface in all Solid‐State Thin‐Film Battery Operating at 5 V

   https://doi.org/10.1002/aenm.202201119  

   Shimizu, Ryosuke ; Cheng, Diyi ; Weaver, Jamie L. ; Zhang, Minghao ; Lu, Bingyu ; Wynn, Thomas A. ; Burger, Randall ; Kim, Min‐cheol ; Zhu, Guomin ; Meng, Ying Shirley ( July 2022 , Advanced Energy Materials)

   Spinel‐type LiNi_0.5Mn_1.5O₄(LNMO) is one of the most promising 5 V‐class cathode materials for Li‐ion batteries that can achieve high energy density and low production costs. However, in liquid electrolyte cells, the high voltage causes continuous cell degradation through the oxidative decomposition of carbonate‐based liquid electrolytes. In contrast, some solid‐state electrolytes have a wide electrochemical stability range and can withstand the required oxidative potential. In this work, a thin‐film battery consisting of an LNMO cathode with a solid lithium phosphorus oxynitride (LiPON) electrolyte is tested and their interface before and after cycling is characterized. With Li metal as the anode, this system can deliver stable performance for 600 cycles with an average Coulombic efficiency >99%. Neutron depth profiling indicates a slight overlithiated layer at the interface prior to cycling, a result that is consistent with the excess charge capacity measured during the first cycle. Cryogenic electron microscopy further reveals intimate contact between LNMO and LiPON without noticeable structure and chemical composition evolution after extended cycling, demonstrating the superior stability of LiPON against a high voltage cathode. Consequently, design guidelines are proposed for interface engineering that can accelerate the commercialization of a high voltage cell with solid or liquid electrolytes.

    

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3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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4. C3SRAM: An In-Memory-Computing SRAM Macro Based on Robust Capacitive Coupling Computing Mechanism

   https://doi.org/10.1109/JSSC.2020.2992886  

   Jiang, Zhewei ; Yin, Shihui ; Seo, Jae-sun ; Seok, Mingoo ( May 2020 , IEEE Journal of Solid-State Circuits)

   This article presents C3SRAM, an in-memory-computing SRAM macro. The macro is an SRAM module with the circuits embedded in bitcells and peripherals to perform hardware acceleration for neural networks with binarized weights and activations. The macro utilizes analog-mixed-signal (AMS) capacitive-coupling computing to evaluate the main computations of binary neural networks, binary-multiply-and-accumulate operations. Without the need to access the stored weights by individual row, the macro asserts all its rows simultaneously and forms an analog voltage at the read bitline node through capacitive voltage division. With one analog-to-digital converter (ADC) per column, the macro realizes fully parallel vector–matrix multiplication in a single cycle. The network type that the macro supports and the computing mechanism it utilizes are determined by the robustness and error tolerance necessary in AMS computing. The C3SRAM macro is prototyped in a 65-nm CMOS. It demonstrates an energy efficiency of 672 TOPS/W and a speed of 1638 GOPS (20.2 TOPS/mm 2 ), achieving 3975 × better energy–delay product than the conventional digital baseline performing the same operation. The macro achieves 98.3% accuracy for MNIST and 85.5% for CIFAR-10, which is among the best in-memory computing works in terms of energy efficiency and inference accuracy tradeoff. 

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5. Experimental Study of NCM-Si Batteries With Bi-Directional Actuation

   https://doi.org/10.1115/SMASIS2021-67596  

   Shan, Shuhua ; Gonzalez, Cody ; Rahn, Christopher ; Frecker, Mary ( September 2021 , 2021 ASME SMASIS)

   Silicon is regarded as one of the most promising anode materials for lithium-ion batteries. Its high theoretical capacity (4000 mAh/g) has the potential to meet the demands of high-energy density applications, such as electric air and ground vehicles. The volume expansion of Si during lithiation is over 300%, indicating its promise as a large strain electrochemical actuator. A Si-anode battery is multifunctional, storing electrical energy and actuating through volume change by lithium-ion insertion.

   To utilize the property of large volume expansion, we design, fabricate, and test two types of Si anode cantilevers with bi-directional actuation: (a) bimorph actuator and (b) insulated double unimorph actuator. A transparent battery chamber is fabricated, provided with NCM cathodes, and filled with electrolyte. The relationship between state of charge and electrode deformation is measured using current integration and high-resolution photogrammetry, respectively. The electrochemical performance, including voltage versus capacity and Coulombic efficiency versus cycle number, is measured for several charge/discharge cycles. Both configurations exhibit deflections in two directions and can store energy. In case (a), the largest deflection is roughly 35% of the cantilever length. Twisting and unexpected bending deflections are observed in this case, possibly due to back-side lithiation, non-uniform coating thickness, and uneven lithium distribution. In case (b), the single silicon active coating layer can deflect 12 passive layers.

    

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