Lee, Sunghwan, Song, Han Wook, Cho, Jae Yong, Radevski, Nik, Truc, Linh Nguyen, Sung, Tae Hyun, Jiang, Zhong-Tao, and No, Kwangsoo. Mobility of Air-Stable p-type Polythiophene Field-Effect Transistors Fabricated Using Oxidative Chemical Vapor Deposition. Retrieved from https://par.nsf.gov/biblio/10187150. Journal of Electronic Materials 49.6 Web. doi:10.1007/s11664-020-07967-5.

Lee, Sunghwan, Song, Han Wook, Cho, Jae Yong, Radevski, Nik, Truc, Linh Nguyen, Sung, Tae Hyun, Jiang, Zhong-Tao, & No, Kwangsoo. Mobility of Air-Stable p-type Polythiophene Field-Effect Transistors Fabricated Using Oxidative Chemical Vapor Deposition. Journal of Electronic Materials, 49 (6). Retrieved from https://par.nsf.gov/biblio/10187150. https://doi.org/10.1007/s11664-020-07967-5

Lee, Sunghwan, Song, Han Wook, Cho, Jae Yong, Radevski, Nik, Truc, Linh Nguyen, Sung, Tae Hyun, Jiang, Zhong-Tao, and No, Kwangsoo. "Mobility of Air-Stable p-type Polythiophene Field-Effect Transistors Fabricated Using Oxidative Chemical Vapor Deposition". Journal of Electronic Materials 49 (6). Country unknown/Code not available. https://doi.org/10.1007/s11664-020-07967-5. https://par.nsf.gov/biblio/10187150.

@article{osti_10187150,
place = {Country unknown/Code not available}, title = {Mobility of Air-Stable p-type Polythiophene Field-Effect Transistors Fabricated Using Oxidative Chemical Vapor Deposition}, url = {https://par.nsf.gov/biblio/10187150}, DOI = {10.1007/s11664-020-07967-5}, abstractNote = {}, journal = {Journal of Electronic Materials}, volume = {49}, number = {6}, author = {Lee, Sunghwan and Song, Han Wook and Cho, Jae Yong and Radevski, Nik and Truc, Linh Nguyen and Sung, Tae Hyun and Jiang, Zhong-Tao and No, Kwangsoo}, }