Abstract Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV − ) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye–Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV − centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV − centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV − centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ∼20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730–800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.
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Narrow-Linewidth Tin-Vacancy Centers in a Diamond Waveguide
Integrating solid-state quantum emitters with photonic circuits
is essential for realizing large-scale quantum photonic processors. Negatively
charged tin-vacancy (SnV−) centers in diamond have emerged as promising
candidates for quantum emitters because of their excellent optical and spin
properties, including narrow-linewidth emission and long spin coherence times.
SnV− centers need to be incorporated in optical waveguides for efficient onchip
routing of the photons they generate. However, such integration has yet to
be realized. In this Letter, we demonstrate the coupling of SnV− centers to a
nanophotonic waveguide. We realize this device by leveraging our recently
developed shallow ion implantation and growth method for the generation of
high-quality SnV− centers and the advanced quasi-isotropic diamond
fabrication technique. We confirm the compatibility and robustness of these
techniques through successful coupling of narrow-linewidth SnV− centers (as
narrow as 36 ± 2 MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV− centers
under resonant excitation. Our results are an important step toward SnV−-based on-chip spin-photon interfaces, single-photon
nonlinearity, and photon-mediated spin interactions.
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- Award ID(s):
- 1838976
- NSF-PAR ID:
- 10191909
- Date Published:
- Journal Name:
- ACS Photonics
- ISSN:
- 2330-4022
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1021/acsphotonics.0c00833
