skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines
The degradation of the copper oxide passivated copper line prepared from a room temperature plasma-based etch process under the electromigration condition has been studied. The copper line surface was oxidized into the copper oxide layer in a parallel-plate plasma reactor operated under the plasma etching or reactive ion etching mode. The surface roughness of the oxide is contributed by the high ion bombardment energy. The lifetime of the sample was shortened by the addition of the oxide passivation layer. It was also decreased with the increase of the stress current density. The sample with the thin bulk copper layer is more resistant to the thermal stress than that with the thick bulk copper layer, which delayed the voids formation in the line breakage process.  more » « less
Award ID(s):
1633580
PAR ID:
10194925
Author(s) / Creator(s):
;
Date Published:
Journal Name:
ECS transactions
Volume:
98
Issue:
3
ISSN:
1938-6737
Page Range / eLocation ID:
99-105
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; (, MRS advances)
    The reliability of the plasma etched copper lines with the self-aligned copper oxide passivation layer has been studied with the electromigration stress method. The oxide passivation layer was prepared by plasma oxidation, which covers the entire exposed copper line to prevent the surface oxidation under the ambient condition. The void formation and growth process reflect the line broken mechanism. Voids formed from grain boundary depletion and grain thinning were monitored by optical microscopes. The line failure times with respect to line width and current density were measured. The addition of the oxide passivation layer shortened the lifetime due to the poor heat transfer and copper diffusion, which accelerated the formation and growth of the voids. The narrow line has a longer lifetime than the wide line because of the fewer grain boundaries for flux divergence to form voids. The copper oxide passivation layer was formed self-aligned to the copper line. It also gettered copper atoms diffused from the bulk copper film. 
    more » « less
  2. ; ; ; (, Plasma Processes and Polymers)
    Abstract Ion bombardment of photoresist materials during plasma etching results in the formation of a surface dense amorphous carbon (DAC) layer that contributes to both etch resistance and the development of surface roughness. Real‐time ellipsometric measurements/analysis reveals that a C4F8‐containing plasma interacts with an Ar‐plasma‐formed DAC layer to produce a modified DAC/fluorocarbon (FC) layer by FC deposition/diffusion of fluorine into the surface. The depletion of the DAC layer via modification and ion bombardment causes the etch rate of the bulk layer to increase. As the modified surface layer is formed, a noticeable decrease in surface roughness decrease is observed. These findings provide an understanding of the mechanisms of atomic layer etching processes in photoresist materials. 
    more » « less
  3. ; ; ; ; ; ; (, Plasma Processes and Polymers)
    Abstract Thin layers of polypropylene (PP) have been treated by argon low‐temperature plasmas in an inductively coupled plasma setup. The etched thickness of PP was monitored in situ by means of single‐wavelength ellipsometry. The ellipsometric model of the polymer surface exposed to plasma consists of a UV‐modified layer, a dense amorphous carbon layer because of ion bombardment, and an effective medium approximation layer, which accounts for moderate surface roughness. The etching behavior has been compared to a model based on argon ion beam irradiation experiments. In this approach, surface processes are described in terms of etching yields and crosslinking probabilities as a function of incident fluxes and energies of Ar ions and UV photons. The ion beam model fits well with the plasma etching results. 
    more » « less
  4. ; (, Journal of The Electrochemical Society)
    Electrochemical atomic layer etching (e-ALE) is a unique approach for etching metals one atomic layer at a time. If practiced under optimal conditions, e-ALE ensures minimal evolution of surface roughness due to the atomic layer-by-layer etching characteristics. During e-ALE of copper (Cu), the crucial first step is the formation of a cuprous sulfide (Cu2S) monolayer via the surface-limited sulfidization reaction. In this paper, we investigate the surface coverage of this sulfide layer as a function of the sulfidization potential, and show that the equilibrium coverage attained can be modeled using the Frumkin adsorption isotherm. At a potential of –0.74 V vs SHE, sulfidization provides near-complete monolayer coverage of Cu by Cu2S, which then facilitates e-ALE in a layer-by-layer etching mode thereby maintaining a smooth post-etch surface. Operation at potentials negative with respect to –0.74 V provides sub-monolayer coverage, which manifests in roughness amplification during etching. This work provides a thermodynamics-guided foundation for the selection of operating conditions during Cu e-ALE. 
    more » « less
  5. ; ; ; ; (, ECS Journal of Solid State Science and Technology)
    BCl 3 is an attractive plasma etchant for oxides because it is a Lewis acid used to scavenge native oxides on many semiconductors due to the strong B–O bonding. We investigated BCl 3 -based dry etching of the NiO/Ga 2 O 3 heterojunction system. BCl 3 /Ar Inductively Coupled Plasmas produced maximum etch rates for NiO up to 300 Å.min −1 and 800 Å.min −1 for β -Ga 2 O 3 under moderate plasma power conditions suitable for low damage pattern transfer. The selectivity for NiO: Ga 2 O 3 was <1 under all conditions. The ion energy threshold for initiation of etching of NiO was between 35–60 eV, depending on the condition and the etch mechanism was ion-driven, as determined by the linear dependence of etch rate on the square root of ion energy incident on the surface. By sharp contrast, the etching of Ga 2 O 3 had a stronger chemical component, without a well-defined ion energy threshold. The as-etched NiO and Ga 2 O 3 surfaces show chlorine residues, which can be removed on both materials by the standard 1NH 4 OH: 10H 2 O or 1HCl: 10H 2 O rinses used for native oxide removal. According to the location of the Cl 2p 3/2 peak, the Cl is ionically bonded. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email