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Title: Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga 2 O 3 in BCl 3
BCl 3 is an attractive plasma etchant for oxides because it is a Lewis acid used to scavenge native oxides on many semiconductors due to the strong B–O bonding. We investigated BCl 3 -based dry etching of the NiO/Ga 2 O 3 heterojunction system. BCl 3 /Ar Inductively Coupled Plasmas produced maximum etch rates for NiO up to 300 Å.min −1 and 800 Å.min −1 for β -Ga 2 O 3 under moderate plasma power conditions suitable for low damage pattern transfer. The selectivity for NiO: Ga 2 O 3 was <1 under all conditions. The ion energy threshold for initiation of etching of NiO was between 35–60 eV, depending on the condition and the etch mechanism was ion-driven, as determined by the linear dependence of etch rate on the square root of ion energy incident on the surface. By sharp contrast, the etching of Ga 2 O 3 had a stronger chemical component, without a well-defined ion energy threshold. The as-etched NiO and Ga 2 O 3 surfaces show chlorine residues, which can be removed on both materials by the standard 1NH 4 OH: 10H 2 O or 1HCl: 10H 2 O rinses used for native oxide removal. According to the location of the Cl 2p 3/2 peak, the Cl is ionically bonded.  more » « less
Award ID(s):
1856662
PAR ID:
10380043
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
11
Issue:
11
ISSN:
2162-8769
Page Range / eLocation ID:
115005
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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