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Title: Antiferromagnetic semiconductor Eu 3 Sn 2 P 4 with Sn–Sn dimer and crown-wrapped Eu
A novel antiferromagnetic semiconductor, Eu 3 Sn 2 P 4 , has been discovered. Single crystals of Eu 3 Sn 2 P 4 were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu 3 Sn 2 P 4 crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP 216). Six Sn–Sn dimers connected by P atoms form a Sn 12 P 24 crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a T N ∼14 K at a low field and undergoes a metamagnetic transition at a high field when T < T N . The effective magnetic moment is 7.41(3) μ B per Eu, corresponding to Eu 2+ . The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ∼60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ∼0.14 eV. Below T N , the resistivity tends to saturate, suggesting the reduction of charge-spin scattering.
Authors:
; ; ; ;
Award ID(s):
1832967
Publication Date:
NSF-PAR ID:
10195471
Journal Name:
Journal of Materials Chemistry C
Volume:
7
Issue:
40
Page Range or eLocation-ID:
12650 to 12656
ISSN:
2050-7526
Sponsoring Org:
National Science Foundation
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