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Title: An electrically pumped surface-emitting semiconductor green laser
Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm 2 , which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.  more » « less
Award ID(s):
1709207
PAR ID:
10198296
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Science Advances
Volume:
6
Issue:
1
ISSN:
2375-2548
Page Range / eLocation ID:
eaav7523
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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