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1. Enhanced Amplified Spontaneous Emission from Optically Pumped Perovskite Light‐Emitting Diodes with Sodium Fluoride Additives

   https://doi.org/10.1002/adpr.202500025  

   Bhowmik, Kanak Kanti; Wu, Yongji; Zhao, Xiaolei; Wanless, Travis; Roh, Kwangdong; Foulger, Stephen H; Zhu, Lin; Xiao, Hai; Zhao, Lianfeng (April 2025, Advanced Photonics Research)

   Metal halide perovskites represent a promising class of gain media for next‐generation nonepitaxial laser diodes. However, fully electrically pumped perovskite laser diodes have not been achieved yet. Herein, the use of sodium fluoride (NaF) is explored as an efficient additive in halide perovskite films to improve their optical and light amplification properties. The incorporation of NaF in perovskites leads to a remarkable threefold increase in light‐emitting intensity. The threshold of amplified spontaneous emission (ASE) by optical pumping is reduced by more than 20%, from ≈13.5 to 10.4 μJ cm⁻². Furthermore, the NaF‐modified perovskites exhibit stable ASE emission, even after exposure to 1.5 billion optical pulses, highlighting substantial improvements in the material's photostability. Finally, optically pumped ASE is observed from a full perovskite light‐emitting diode stack, including lossy metal electrodes. This work demonstrates significant progress toward the development of electrically pumped perovskite lasers. 

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2. An optically pumped 2.5  μ m GeSn laser on Si operating at 110 K

   https://doi.org/10.1063/1.4966141  

   Al-Kabi, Sattar; Ghetmiri, Seyed Amir; Margetis, Joe; Pham, Thach; Zhou, Yiyin; Dou, Wei; Collier, Bria; Quinde, Randy; Du, Wei; Mosleh, Aboozar; et al (October 2016, Applied Physics Letters)

   This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm2 and 2476 nm, respectively. Lasing characteristic temperature (T0) was extracted as 65 K. 

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3. Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

   https://doi.org/10.1063/5.0085365  

   van Deurzen, Len; Page, Ryan; Protasenko, Vladimir; Nomoto, Kazuki; Xing, Huili; Jena, Debdeep (March 2022, AIP Advances)

   Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes. 

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4. ∼8.5 μ m-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition

   https://doi.org/10.1063/5.0122272  

   Xu, S.; Zhang, S.; Kirch, J. D.; Suri, S.; Pokharel, N.; Gao, H.; Kim, H.; Dhingra, P.; Lee, M. L.; Botez, D.; et al (October 2022, Applied Physics Letters)

   Room-temperature, pulsed-operation lasing of 8.5  μm-emitting InP-based quantum cascade lasers (QCLs), with low threshold-current density and watt-level output power, is demonstrated from structures grown on (001) GaAs substrates by metal-organic chemical vapor deposition. Prior to growing the laser structure, which contains a 35-stage In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As lattice-matched active-core region, a ∼2  μm-thick nearly fully relaxed InP buffer with strained 1.6 nm-thick InAs quantum-dot-like dislocation-filter layers was grown. A smooth terminal buffer-layer surface, with roughness as low as 0.4 nm on a 10 × 10  μm 2 scale, was obtained, while the estimated threading-dislocation density was in the mid-range × 10 8  cm −2 . A series of measurements, on lasers grown on InP metamorphic buffer layers (MBLs) and on native InP substrates, were performed for understanding the impact of the buffer-layer's surface roughness, residual strain, and threading-dislocation density on unipolar devices such as QCLs. As-cleaved devices, grown on InP MBLs, were fabricated as 25  μm × 3 mm deep-etched ridge guides with lateral current injection. The results are pulsed maximum output power of 1.95 W/facet and a low threshold-current density of 1.86 kA/cm 2 at 293 K. These values are comparable to those obtained from devices grown on InP: 2.09 W/facet and 2.42 kA/cm 2 . This demonstrates the relative insensitivity of the device-performance metrics on high residual threading-dislocation density, and high-performance InP-based QCLs emitting near 8  μm can be achieved on lattice-mismatched substrates. 

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5. Oxide-Confined VCSELs for High-Speed Optical Interconnects

   Feng, M; Holonyak, N. Jr.; Wu, C.-H. (July 2018, IEEE journal of quantum electronics)

   The electrically pumped vertical-cavity surface- emitting laser (VCSEL) was first demonstrated with metal cavities by Iga (1979); however, the device threshold current was too high. Distributed Bragg reflector cavities proposed by Scifres and Burnham (1975) were adopted to improve the optical cavity loss. Yet, it was not a practical use until the discovery of the native oxide of AlGaAs and the insertion of quantum wells to provide simultaneous current and optical confinement in semiconductor laser by Holonyak and Dallesasse (1990). Later, the first “low- threshold” oxide-confined VCSEL was realized by Deppe (1994) and opened the door of commercial application for a gigabit energy-efficient optical links. At present, we demonstrated that the oxide-confined VCSELs have advanced error-free data trans- mission [bit-error rate (BER) ≤ 10−12]to 57 Gb/s at 25 °C and 50 Gb/s at 85 °C, and also demonstrated that the pre-leveled 16-quadrature amplitude modulation orthogonal frequency- division multiplexing data were achieved at 104 Gbit/s under back-to-back transmission with the received error vector mag- nitude, SNR, and BER of 17.3%, 15.2 dB, and 3.8 × 10−3, respectively. 

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