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Title: Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)P DC of 10.1 at 30 GHz
Award ID(s):
1711030
PAR ID:
10203794
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
2020 Device Research Conference (2020)
Page Range / eLocation ID:
1 to 2
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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