Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)P DC of 10.1 at 30 GHz
- Award ID(s):
- 1711030
- NSF-PAR ID:
- 10203794
- Date Published:
- Journal Name:
- 2020 Device Research Conference (2020)
- Page Range / eLocation ID:
- 1 to 2
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation