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1. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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2. Quasi-monolithic heterodyne laser interferometer for inertial sensing

   https://doi.org/10.1364/OL.473476  

   Zhang, Yanqi; Guzman, Felipe (September 2022, Optics Letters)

   We present a compact heterodyne laser interferometer developed for high-sensitivity displacement sensing applications. This interferometer consists of customized prisms and wave plates assembled as a quasi-monolithic unit to realize a miniaturized system. The interferometer design adopts a common-mode rejection scheme to provide a high rejection ratio to common environmental noise. Experimental tests in vacuum show a displacement sensitivity level of $11\mathrm{p}\mathrm{m}/\sqrt{\mathrm{H}\mathrm{z}}$at $100\mathrm{m}\mathrm{H}\mathrm{z}$and as low as $0.6\mathrm{p}\mathrm{m}/\sqrt{\mathrm{H}\mathrm{z}}$above $1\mathrm{p}\mathrm{m}$. The prototype unit is $20\mathrm{m}\mathrm{m}\times <\#comment/>20\mathrm{m}\mathrm{m}\times <\#comment/>10\mathrm{m}\mathrm{m}$in size and weighs $4.5\mathrm{g}$, allowing subsequent integration in compact systems. 

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3. In-vacuum measurements of optical scatter versus annealing temperature for amorphous Ta ₂ O ₅ and TiO ₂ :Ta ₂ O ₅ thin films

   https://doi.org/10.1364/JOSAA.415665  

   Capote, Elenna_M; Gleckl, Amy; Guerrero, Jazlyn; Rezac, Michael; Wright, Robert; Smith, Joshua_R (March 2021, Journal of the Optical Society of America A)

   Optical coatings formed from amorphous oxide thin films have many applications in precision measurements. The Advanced Laser Interferometer Gravitational-Wave Observatory (LIGO) and Advanced Virgo use coatings of $\mathrm{S}\mathrm{i}{\mathrm{O}}_2$(silica) and $\mathrm{T}\mathrm{i}{\mathrm{O}}_2:\mathrm{T}{\mathrm{a}}_2{\mathrm{O}}_5$(titania-doped tantala) and post-deposition annealing to 500°C to achieve low thermal noise and low optical absorption. Optical scattering by these coatings is a key limit to the sensitivity of the detectors. This paper describes optical scattering measurements for single-layer, ion-beam-sputtered thin films on fused silica substrates: two samples of $\mathrm{T}{\mathrm{a}}_2{\mathrm{O}}_5$and two of $\mathrm{T}\mathrm{i}{\mathrm{O}}_2:\mathrm{T}{\mathrm{a}}_2{\mathrm{O}}_5$. Using an imaging scatterometer at a fixed scattering angle of 12.8°, in-situ changes in the optical scatter of each sample were assessed during post-deposition annealing to 500°C in vacuum. The scatter of three of the four coated optics was observed to decrease during the annealing process, by 25–30% for tantala and up to 74% for titania-doped tantala, while the scatter from the fourth sample held constant. Angle-resolved scatter measurements performed before and after vacuum annealing suggest some improvement in three of the four samples. These results demonstrate that post-deposition, high-temperature annealing of single-layer tantala and titania-doped tantala thin films in vacuum does not lead to an increase in scatter, and may actually improve their scatter. 

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4. Ultra-high extinction ratio polarization beam splitter with extreme skin-depth waveguide

   https://doi.org/10.1364/OL.420824  

   Ahmed, Syed_Z; Ahmed, Ishtiaque; Mia, Md_Borhan; Jaidye, Nafiz; Kim, Sangsik (April 2021, Optics Letters)

   In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ( $\approx <\#comment/>60\mathrm{d}\mathrm{B}$for TE and $\approx <\#comment/>48\mathrm{d}\mathrm{B}$for TM) with a compact coupling length ( $\approx <\#comment/>14.5\text{µ<\#comment/>}\mathrm{m}$). The insertion loss is also negligible ( $<<\#comment/>0.6\mathrm{d}\mathrm{B}$). The bandwidth is $><\#comment/>80$(30) nm for the TE (TM) extinction ratio $><\#comment/>20\mathrm{d}\mathrm{B}$. Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing. 

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5. Monolithic all-silicon flat lens for broadband LWIR imaging

   https://doi.org/10.1364/OL.426384  

   Kigner, Orrin; Meem, Monjurul; Baker, Brian; Banerji, Sourangsu; Hon, Philip_W_C; Sensale-Rodriguez, Berardi; Menon, Rajesh (August 2021, Optics Letters)

   We designed, fabricated, and characterized a flat multi-level diffractive lens comprised of only silicon with $\mathrm{d}\mathrm{i}\mathrm{a}\mathrm{m}\mathrm{e}\mathrm{t}\mathrm{e}\mathrm{r}=15.2\mathrm{m}\mathrm{m}$, focal $\mathrm{l}\mathrm{e}\mathrm{n}\mathrm{g}\mathrm{t}\mathrm{h}=19\mathrm{m}\mathrm{m}$, numerical aperture of 0.371, and operating over the long-wave infrared (LWIR) $\mathrm{s}\mathrm{p}\mathrm{e}\mathrm{c}\mathrm{t}\mathrm{r}\mathrm{u}\mathrm{m}=8\text{µ<\#comment/>}\mathrm{m}$to 14 µm. We experimentally demonstrated a field of view of 46°, depth of focus $><\#comment/>5\mathrm{m}\mathrm{m}$, and wavelength-averaged Strehl ratio of 0.46. All of these metrics were comparable to those of a conventional refractive lens. The active device thickness is only 8 µm, and its weight (including the silicon substrate) is less than 0.2 g. 

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