Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices.
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Unexpectedly large remanent polarization of Hf 0.5 Zr 0.5 O 2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum
- Award ID(s):
- 1841466
- PAR ID:
- 10208975
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 118
- Issue:
- 1
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 012903
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation