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Title: 2D MoS 2 -Based Threshold Switching Memristor for Artificial Neuron
Award ID(s):
1845331
PAR ID:
10211258
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
41
Issue:
6
ISSN:
0741-3106
Page Range / eLocation ID:
936 to 939
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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