Liu, M, Jaiswal, H, Shahi, S, Wei, S, Fu, Y, Chang, C, Chakravarty, A, Yao, F, and and Li, H. Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection. Retrieved from https://par.nsf.gov/biblio/10212087. 2020 IEEE International Electron Devices Meeting (IEDM) .

Liu, M, Jaiswal, H, Shahi, S, Wei, S, Fu, Y, Chang, C, Chakravarty, A, Yao, F, & and Li, H. Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection. 2020 IEEE International Electron Devices Meeting (IEDM), (). Retrieved from https://par.nsf.gov/biblio/10212087.

Liu, M, Jaiswal, H, Shahi, S, Wei, S, Fu, Y, Chang, C, Chakravarty, A, Yao, F, and and Li, H. "Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection". 2020 IEEE International Electron Devices Meeting (IEDM) (). Country unknown/Code not available. https://par.nsf.gov/biblio/10212087.

@article{osti_10212087,
place = {Country unknown/Code not available}, title = {Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection}, url = {https://par.nsf.gov/biblio/10212087}, abstractNote = {}, journal = {2020 IEEE International Electron Devices Meeting (IEDM)}, author = {Liu, M and Jaiswal, H and Shahi, S and Wei, S and Fu, Y and Chang, C and Chakravarty, A and Yao, F and and Li, H.}, editor = {null} }