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Title: Monolayer MoS2 Steep-slope Transistors with Record-high Sub-60-mV/decade Current Density Using Dirac-source Electron Injection
Authors:
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Award ID(s):
1944095
Publication Date:
NSF-PAR ID:
10212087
Journal Name:
2020 IEEE International Electron Devices Meeting (IEDM)
Sponsoring Org:
National Science Foundation
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