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Title: Localized UV emitters on the surface of β-Ga2O3
Abstract Monoclinic gallium oxide (β-Ga 2 O 3 ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.  more » « less
Award ID(s):
1830766
PAR ID:
10212178
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Scientific Reports
Volume:
10
Issue:
1
ISSN:
2045-2322
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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