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Topological metals/semimetals (TMs) have emerged as a new frontier in the field of quantum materials. A few two-dimensional (2D) boron sheets have been suggested as Dirac materials, however, to date TMs made of three-dimensional (3D) boron structures have not been found. Herein, by means of systematic first principles computations, we discovered that a rather stable 3D boron allotrope, namely 3D-α′ boron, is a nodal-chain semimetal. In momentum space, six nodal lines and rings contact each other and form a novel spindle nodal chain. This 3D-α′ boron can be formed by stacking 2D wiggle α′ boron sheets, which are also nodal-ring semimetals. In addition, our chemical bond analysis revealed that the topological properties of the 3D and 2D boron structures are related to the π bonds between boron atoms, however, the bonding characteristics are different from those in the 2D and 3D carbon structures.
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Polymorphism of low dimensional boron nanomaterials driven by electrostatic gating: a computational discovery
The successful synthesis of two-dimensional (2D) boron sheets typically relies on the utilization of a silver surface, which acts as a gated substrate compensating for the electron-deficiency of boron. However, how the structures of one-dimensional (1D) boron are affected by the gating effect remains unclear. By means of an unbiased global minimum structure search and density functional theory (DFT) computations, we discovered the coexistence of 2D boron sheets and 1D ribbons triggered by electrostatic gating. Specifically, at a low excess charge density level (<0.1 e per atom), 2D boron sheets dominate the low energy configurations. As the charge density increases (>0.3 e per atom), more 1D boron ribbons emerge, while the number of 2D layers is reduced. Additionally, a number of low-lying 1D boron ribbons were discovered, among which a flat borophene-like ribbon (FBR) was predicted to be stable and possess high mechanical strength. Moreover, the electride Ca 2 N was identified as an ideal substrate for the fabrication of the FBR because of its ability to supply a strong electrostatic field. This work bridges the gap between 2D and 1D boron structures, reveals the polymorphism of 1D boron ribbons under the electrostatic gating effect, and in general provides broad implications for future synthesis and applications of low-dimensional boron materials.
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- Award ID(s):
- 1736093
- PAR ID:
- 10213741
- Date Published:
- Journal Name:
- Nanoscale
- Volume:
- 12
- Issue:
- 19
- ISSN:
- 2040-3364
- Page Range / eLocation ID:
- 10543 to 10549
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/C9NR10774F
