An official website of the United States government
Topological metals/semimetals (TMs) have emerged as a new frontier in the field of quantum materials. A few two-dimensional (2D) boron sheets have been suggested as Dirac materials, however, to date TMs made of three-dimensional (3D) boron structures have not been found. Herein, by means of systematic first principles computations, we discovered that a rather stable 3D boron allotrope, namely 3D-α′ boron, is a nodal-chain semimetal. In momentum space, six nodal lines and rings contact each other and form a novel spindle nodal chain. This 3D-α′ boron can be formed by stacking 2D wiggle α′ boron sheets, which are also nodal-ring semimetals. In addition, our chemical bond analysis revealed that the topological properties of the 3D and 2D boron structures are related to the π bonds between boron atoms, however, the bonding characteristics are different from those in the 2D and 3D carbon structures.
more »
« less
Polymorphism of low dimensional boron nanomaterials driven by electrostatic gating: a computational discovery
The successful synthesis of two-dimensional (2D) boron sheets typically relies on the utilization of a silver surface, which acts as a gated substrate compensating for the electron-deficiency of boron. However, how the structures of one-dimensional (1D) boron are affected by the gating effect remains unclear. By means of an unbiased global minimum structure search and density functional theory (DFT) computations, we discovered the coexistence of 2D boron sheets and 1D ribbons triggered by electrostatic gating. Specifically, at a low excess charge density level (<0.1 e per atom), 2D boron sheets dominate the low energy configurations. As the charge density increases (>0.3 e per atom), more 1D boron ribbons emerge, while the number of 2D layers is reduced. Additionally, a number of low-lying 1D boron ribbons were discovered, among which a flat borophene-like ribbon (FBR) was predicted to be stable and possess high mechanical strength. Moreover, the electride Ca 2 N was identified as an ideal substrate for the fabrication of the FBR because of its ability to supply a strong electrostatic field. This work bridges the gap between 2D and 1D boron structures, reveals the polymorphism of 1D boron ribbons under the electrostatic gating effect, and in general provides broad implications for future synthesis and applications of low-dimensional boron materials.
more »
« less
- Award ID(s):
- 1736093
- PAR ID:
- 10213741
- Date Published:
- Journal Name:
- Nanoscale
- Volume:
- 12
- Issue:
- 19
- ISSN:
- 2040-3364
- Page Range / eLocation ID:
- 10543 to 10549
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
null (Ed.)Abstract Surface plasmons, collective electromagnetic excitations coupled to conduction electron oscillations, enable the manipulation of light–matter interactions at the nanoscale. Plasmon dispersion of metallic structures depends sensitively on their dimensionality and has been intensively studied for fundamental physics as well as applied technologies. Here, we report possible evidence for gate-tunable hybrid plasmons from the dimensionally mixed coupling between one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene. In contrast to the carrier density-independent 1D Luttinger liquid plasmons in bare metallic carbon nanotubes, plasmon wavelengths in the 1D-2D heterostructure are modulated by 75% via electrostatic gating while retaining the high figures of merit of 1D plasmons. We propose a theoretical model to describe the electromagnetic interaction between plasmons in nanotubes and graphene, suggesting plasmon hybridization as a possible origin for the observed large plasmon modulation. The mixed-dimensional plasmonic heterostructures may enable diverse designs of tunable plasmonic nanodevices.more » « less
-
Abstract Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS2and p-type WSe2transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.more » « less
-
Controlling charge density in two-dimensional (2D) materials is a powerful approach for engineering new electronic phases and properties. This control is traditionally realized by electrostatic gating. Here, we report an optical approach for generation of high carrier densities using transition metal dichalcogenide heterobilayers, WSe 2 /MoSe 2 , with type II band alignment. By tuning the optical excitation density above the Mott threshold, we realize the phase transition from interlayer excitons to charge-separated electron/hole plasmas, where photoexcited electrons and holes are localized to individual layers. High carrier densities up to 4 × 10 14 cm −2 can be sustained under both pulsed and continuous wave excitation conditions. These findings open the door to optical control of electronic phases in 2D heterobilayers.more » « less
-
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/C9NR10774F
