Yin, Shihui, Sun, Xiaoyu, Yu, Shimeng, and Seo, Jae-Sun. High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS. Retrieved from https://par.nsf.gov/biblio/10214140. IEEE Transactions on Electron Devices 67.10 Web. doi:10.1109/TED.2020.3015178.

Yin, Shihui, Sun, Xiaoyu, Yu, Shimeng, & Seo, Jae-Sun. High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS. IEEE Transactions on Electron Devices, 67 (10). Retrieved from https://par.nsf.gov/biblio/10214140. https://doi.org/10.1109/TED.2020.3015178

Yin, Shihui, Sun, Xiaoyu, Yu, Shimeng, and Seo, Jae-Sun. "High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS". IEEE Transactions on Electron Devices 67 (10). Country unknown/Code not available. https://doi.org/10.1109/TED.2020.3015178. https://par.nsf.gov/biblio/10214140.

@article{osti_10214140,
place = {Country unknown/Code not available}, title = {High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS}, url = {https://par.nsf.gov/biblio/10214140}, DOI = {10.1109/TED.2020.3015178}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {67}, number = {10}, author = {Yin, Shihui and Sun, Xiaoyu and Yu, Shimeng and Seo, Jae-Sun}, editor = {null} }