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1. Synthesis and Characterization of Non-Aqueous [Tc X M-PW 11 O 39 ] n - with M = O, N: Comparing Tc V and Tc VI in Metal Oxide Matrices: Synthesis and Characterization of Non-Aqueous [Tc X M-PW 11 O 39 ] n - with M = O, N: Comparing Tc V and Tc VI in Metal Oxide Matrices

   https://doi.org/10.1002/ejic.201900864  

   Burton-Pye, Benjamin P. ; Dembowski, Mateusz ; Lukens, Jr., Wayne W. ; Cruz, Anthony ; Althour, Alrasheed ; Lopez, Gustavo E. ; Salcedo, Ramsey ; Gallagher, Colleen M. B. ; McGregor, Donna ; Francesconi, Lynn C. ( November 2019 , European Journal of Inorganic Chemistry)
2. Dihydrogen Tetrametaphosphate, [P 4 O 12 H 2 ] 2– : Synthesis, Solubilization in Organic Media, Preparation of its Anhydride [P 4 O 11 ] 2– and Acidic Methyl Ester, and Conversion to Tetrametaphosphate Metal Complexes via Protonolysis

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3. Growth of α-Ga 2 O 3 on α-Al 2 O 3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

   https://doi.org/10.35848/1347-4065/acbe04  

   McCandless, J. P. ; Rowe, D. ; Pieczulewski, N. ; Protasenko, V. ; Alonso-Orts, M. ; Williams, M. S. ; Eickhoff, M. ; Xing, H. G. ; Muller, D. A. ; Jena, D. ; et al ( March 2023 , Japanese Journal of Applied Physics)

   Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy. 

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4. Lattice Expansion in Metal Oxide Nanoparticles: MgO, Co 3 O 4 , & Fe 3 O 4

   https://doi.org/10.1111/jace.14478  

   Rodenbough, Philip P. ; Zheng, Chengjunyi ; Liu, Yuxuan ; Hui, Chenyuan ; Xia, Yuxuan ; Ran, Ziying ; Hu, Yanjun ; Chan, Siu-Wai ; Wong-Ng, ed., W. ( January 2017 , Journal of the American Ceramic Society)
5. In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

   https://doi.org/10.1002/aelm.202100333  

   Roy, Saurav ; Chmielewski, Adrian E. ; Bhattacharyya, Arkka ; Ranga, Praneeth ; Sun, Rujun ; Scarpulla, Michael A. ; Alem, Nasim ; Krishnamoorthy, Sriram ( August 2021 , Advanced Electronic Materials)

   High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al₂O₃on β‐Ga₂O₃as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al₂O₃is performed in the same reactor as Ga₂O₃using trimethylaluminum and O₂as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al₂O₃/β‐Ga₂O₃interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D_it) are measured using ultraviolet‐assisted CV technique. The average D_itfor the MOSCAP is determined to be 6.4×10¹¹cm⁻²eV⁻¹. The conduction band offset of the Al₂O₃/ Ga₂O₃interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al₂O₃/Ga₂O₃interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm⁻¹. This in situ Al₂O₃dielectric on β‐Ga₂O₃with improved dielectric properties can enable Ga₂O₃‐based high‐performance devices.

    

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