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1. Selectivity of H ₂ O ₂ and O ₂ by water oxidation on metal oxide surfaces

   https://doi.org/10.1063/1.5046886  

   Zhu, Shasha; Zhao, Yanyan; He, Yumin; Wang, Dunwei (January 2019, The Journal of Chemical Physics)
2. Tl ₂ Ir ₂ O ₇ : A Pauli Paramagnetic Metal, Proximal to a Metal Insulator Transition

   https://doi.org/10.1021/acs.inorgchem.0c03124  

   Feng, Hai L.; Kang, Chang-Jong; Deng, Zheng; Croft, Mark; Liu, Sizhan; Tyson, Trevor A.; Lapidus, Saul H.; Frank, Corey E.; Shi, Youguo; Jin, Changqing; et al (April 2021, Inorganic Chemistry)

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3. In Situ Dielectric Al ₂ O ₃ /β‐Ga ₂ O ₃ Interfaces Grown Using Metal–Organic Chemical Vapor Deposition

   https://doi.org/10.1002/aelm.202100333  

   Roy, Saurav; Chmielewski, Adrian_E; Bhattacharyya, Arkka; Ranga, Praneeth; Sun, Rujun; Scarpulla, Michael_A; Alem, Nasim; Krishnamoorthy, Sriram (August 2021, Advanced Electronic Materials)

   Abstract High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al₂O₃on β‐Ga₂O₃as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al₂O₃is performed in the same reactor as Ga₂O₃using trimethylaluminum and O₂as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al₂O₃/β‐Ga₂O₃interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D_it) are measured using ultraviolet‐assisted CV technique. The average D_itfor the MOSCAP is determined to be 6.4×10¹¹cm⁻²eV⁻¹. The conduction band offset of the Al₂O₃/ Ga₂O₃interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al₂O₃/Ga₂O₃interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm⁻¹. This in situ Al₂O₃dielectric on β‐Ga₂O₃with improved dielectric properties can enable Ga₂O₃‐based high‐performance devices. 

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4. Unexpectedly large remanent polarization of Hf _0.5 Zr _0.5 O ₂ metal–ferroelectric–metal capacitor fabricated without breaking vacuum

   https://doi.org/10.1063/5.0029532  

   Lee, Younghwan; Alex Hsain, H.; Fields, Shelby S.; Jaszewski, Samantha T.; Horgan, Madison D.; Edgington, Patrick G.; Ihlefeld, Jon F.; Parsons, Gregory N.; Jones, Jacob L. (January 2021, Applied Physics Letters)

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5. Observation of Transition‐Metal–Boron Triple Bonds in IrB ₂ O ⁻ and ReB ₂ O ⁻

   https://doi.org/10.1002/anie.202006652  

   Chen, Teng‐Teng; Cheung, Ling Fung; Chen, Wei‐Jia; Cavanagh, Joseph; Wang, Lai‐Sheng (June 2020, Angewandte Chemie International Edition)

   Abstract Multiple bonds between boron and transition metals are known in many borylene (:BR) complexes via metal d_π→BR back‐donation, despite the electron deficiency of boron. An electron‐precise metal–boron triple bond was first observed in BiB₂O⁻[Bi≡B−B≡O]⁻in which both boron atoms can be viewed as sp‐hybridized and the [B−BO]⁻fragment is isoelectronic to a carbyne (CR). To search for the first electron‐precise transition‐metal‐boron triple‐bond species, we have produced IrB₂O⁻and ReB₂O⁻and investigated them by photoelectron spectroscopy and quantum‐chemical calculations. The results allow to elucidate the structures and bonding in the two clusters. We find IrB₂O⁻has a closed‐shell bent structure (C_s,¹A′) with BO⁻coordinated to an Ir≡B unit, (⁻OB)Ir≡B, whereas ReB₂O⁻is linear (C_∞v,³Σ⁻) with an electron‐precise Re≡B triple bond, [Re≡B−B≡O]⁻. The results suggest the intriguing possibility of synthesizing compounds with electron‐precise M≡B triple bonds analogous to classical carbyne systems. 

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