α-Ga 2 O 3 has the corundum structure analogous to that of α-Al 2 O 3 . The bandgap energy of α-Ga 2 O 3 is 5.3 eV and is greater than that of β-Ga 2 O 3 , making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D centers produced by the implantation of H + and D + into α-Ga 2 O 3 have been studied by infrared spectroscopy and complementary theory. An O–H line at 3269 cm −1 is assigned to H complexed with a Ga vacancy (V Ga ), similar to the case of H trapped by an Al vacancy (V Al ) in α-Al 2 O 3 . The isolated V Ga and V Al defects in α-Ga 2 O 3 and α-Al 2 O 3 are found by theory to have a “shifted” vacancy-interstitial-vacancy equilibrium configuration, similar to V Ga in β-Ga 2 O 3 , which also has shifted structures. However, the addition of H causes the complex with H trapped at an unshifted vacancy to have the lowest energy in both α-Ga 2 O 3 and α-Al 2 O 3 .
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NbIr 2 B 2 and TaIr 2 B 2 – New Low Symmetry Noncentrosymmetric Superconductors with Strong Spin–Orbit Coupling
- Award ID(s):
- 1944965
- PAR ID:
- 10215263
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 31
- Issue:
- 3
- ISSN:
- 1616-301X
- Page Range / eLocation ID:
- 2007960
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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